Here, we report a simple, alternative route towards high-mobility structures of the small-molecular semiconductor 5,11-bis(triethyl silylethynyl) anthradithiophene that requires one single processing step without the need for any post-deposition processing. The method relies on careful control of the casting temperature of the semiconductor and allows rapid production of transistors with uniform and reproducible device performance over large areas.
|Journal||Applied Physics Letters|
|State||Published - Dec 26 2011|
Bibliographical noteFunding Information:
We are very grateful to the UK’s Engineering and Physical Sciences Research Council and the Dutch Polymer Institute (LATFE programme) for financial support and also acknowledge the EC’s 7th Framework Program ONE-P project (Grant Agreement 212311) for funding.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)