Small-scale plasticity in thin Cu and Al films

Gerhard Dehm; T. John Balk; Hervais Edongué; Eduard Arzt

doi:10.1016/S0167-9317(03)00395-2

Small-scale plasticity in thin Cu and Al films

Gerhard Dehm, T. John Balk, Hervais Edongué, Eduard Arzt

Research output: Contribution to journal › Conference article › peer-review

102 Scopus citations

Abstract

Flow stresses in thin metal films significantly exceed the flow stresses of their bulk counterparts. In order to identify the underlying deformation mechanisms and correlate them with microstructure, we analysed epitaxial and polycrystalline Cu and Al thin films. The films (100-2000 nm thickness) were magnetron sputtered on (0001) α-Al₂O₃ single crystals or on nitrided and oxidised (001) Si substrates. For epitaxial films, the flow stress measurements, which were obtained from substrate-curvature tests, agree with predictions from a dislocation-based model, whereas for polycrystalline films the stresses measured for film thicknesses down to 400 nm are much higher than predicted. However, thinner films reveal a plateau in room temperature flow stress. This behavior, as well as the stress-temperature evolution of the various films will be discussed in terms of existing theories for plasticity in thin metal films, and under consideration of recent in situ transmission electron microscopy studies.

Original language	English
Pages (from-to)	412-424
Number of pages	13
Journal	Microelectronic Engineering
Volume	70
Issue number	2-4
DOIs	https://doi.org/10.1016/S0167-9317(03)00395-2
State	Published - Nov 2003
Event	Materials for Advanced Metallization 2003 - La Londe Les Maures, France Duration: Mar 9 2003 → Mar 12 2003

Bibliographical note

Funding Information:
GD thanks Dr. M. Legros and Dr. B. Inkson for stimulating discussions and fruitful collaborations. HE acknowledges financial support by the DFG via the Graduiertenkolleg innere Grenzflächen. Part of this work is supported by the DFG project DE 796/5-3. The authors thank Professor H. Gao for many helpful discussions. Dr. T. Wagner and his team from the ‘ZWE Dünnschicht’ are acknowledged for assistance with thin film deposition and Professor M. Rühle for use of the TEM facilities.

Keywords

Diffusional creep
Dislocation
Hillock
Passivation
Size effect
Thin film plasticity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(03)00395-2

Cite this

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abstract = "Flow stresses in thin metal films significantly exceed the flow stresses of their bulk counterparts. In order to identify the underlying deformation mechanisms and correlate them with microstructure, we analysed epitaxial and polycrystalline Cu and Al thin films. The films (100-2000 nm thickness) were magnetron sputtered on (0001) α-Al2O3 single crystals or on nitrided and oxidised (001) Si substrates. For epitaxial films, the flow stress measurements, which were obtained from substrate-curvature tests, agree with predictions from a dislocation-based model, whereas for polycrystalline films the stresses measured for film thicknesses down to 400 nm are much higher than predicted. However, thinner films reveal a plateau in room temperature flow stress. This behavior, as well as the stress-temperature evolution of the various films will be discussed in terms of existing theories for plasticity in thin metal films, and under consideration of recent in situ transmission electron microscopy studies.",

keywords = "Diffusional creep, Dislocation, Hillock, Passivation, Size effect, Thin film plasticity",

author = "Gerhard Dehm and Balk, {T. John} and Hervais Edongu{\'e} and Eduard Arzt",

note = "Funding Information: GD thanks Dr. M. Legros and Dr. B. Inkson for stimulating discussions and fruitful collaborations. HE acknowledges financial support by the DFG via the Graduiertenkolleg innere Grenzfl{\"a}chen. Part of this work is supported by the DFG project DE 796/5-3. The authors thank Professor H. Gao for many helpful discussions. Dr. T. Wagner and his team from the {\textquoteleft}ZWE D{\"u}nnschicht{\textquoteright} are acknowledged for assistance with thin film deposition and Professor M. R{\"u}hle for use of the TEM facilities.; Materials for Advanced Metallization 2003 ; Conference date: 09-03-2003 Through 12-03-2003",

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T1 - Small-scale plasticity in thin Cu and Al films

AU - Dehm, Gerhard

AU - Balk, T. John

AU - Edongué, Hervais

AU - Arzt, Eduard

N1 - Funding Information: GD thanks Dr. M. Legros and Dr. B. Inkson for stimulating discussions and fruitful collaborations. HE acknowledges financial support by the DFG via the Graduiertenkolleg innere Grenzflächen. Part of this work is supported by the DFG project DE 796/5-3. The authors thank Professor H. Gao for many helpful discussions. Dr. T. Wagner and his team from the ‘ZWE Dünnschicht’ are acknowledged for assistance with thin film deposition and Professor M. Rühle for use of the TEM facilities.

PY - 2003/11

Y1 - 2003/11

N2 - Flow stresses in thin metal films significantly exceed the flow stresses of their bulk counterparts. In order to identify the underlying deformation mechanisms and correlate them with microstructure, we analysed epitaxial and polycrystalline Cu and Al thin films. The films (100-2000 nm thickness) were magnetron sputtered on (0001) α-Al2O3 single crystals or on nitrided and oxidised (001) Si substrates. For epitaxial films, the flow stress measurements, which were obtained from substrate-curvature tests, agree with predictions from a dislocation-based model, whereas for polycrystalline films the stresses measured for film thicknesses down to 400 nm are much higher than predicted. However, thinner films reveal a plateau in room temperature flow stress. This behavior, as well as the stress-temperature evolution of the various films will be discussed in terms of existing theories for plasticity in thin metal films, and under consideration of recent in situ transmission electron microscopy studies.

AB - Flow stresses in thin metal films significantly exceed the flow stresses of their bulk counterparts. In order to identify the underlying deformation mechanisms and correlate them with microstructure, we analysed epitaxial and polycrystalline Cu and Al thin films. The films (100-2000 nm thickness) were magnetron sputtered on (0001) α-Al2O3 single crystals or on nitrided and oxidised (001) Si substrates. For epitaxial films, the flow stress measurements, which were obtained from substrate-curvature tests, agree with predictions from a dislocation-based model, whereas for polycrystalline films the stresses measured for film thicknesses down to 400 nm are much higher than predicted. However, thinner films reveal a plateau in room temperature flow stress. This behavior, as well as the stress-temperature evolution of the various films will be discussed in terms of existing theories for plasticity in thin metal films, and under consideration of recent in situ transmission electron microscopy studies.

KW - Diffusional creep

KW - Dislocation

KW - Hillock

KW - Passivation

KW - Size effect

KW - Thin film plasticity

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JO - Microelectronic Engineering

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T2 - Materials for Advanced Metallization 2003

Y2 - 9 March 2003 through 12 March 2003

ER -

Small-scale plasticity in thin Cu and Al films

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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