TY - JOUR
T1 - Solid-Liquid-Vapor Synthesis of Negative Metal Oxide Nanowire Arrays
AU - Yu, Lei
AU - Riddle, Alexandra J.
AU - Wang, Shanshan
AU - Sundararajan, Abhishek
AU - Thompson, Justin
AU - Chang, Yao Jen
AU - Park, Matthew E.
AU - Seo, Sung S.Ambrose
AU - Guiton, Beth S.
N1 - Publisher Copyright:
© 2016 American Chemical Society
PY - 2016/12/27
Y1 - 2016/12/27
N2 - Nanowires grown using the vapor-liquid-solid (VLS) mechanism are highly attractive components for functional nanomaterials since they grow along unique crystallographic axes to form defect-free single crystals with well-controlled dimensions. To date, however, these free-standing wires have been put to little use, since their ordered arrangement or placement is highly challenging. Here, we report an approach to create ordered arrays of nanoscale interfaces, in which we utilize the reverse of the VLS mechanism (the solid-liquid-vapor (SLV) mechanism) to etch the inverse of a nanowire, a "negative nanowire", into a single crystal. In this way, we achieve essentially the same array of crystallographic surfaces as would be achieved by growing a large array of nanowires but in a way that creates a single object which is easy to handle. The SLV mechanism is a unique approach in that it is governed by the same crystallography which makes the VLS mechanism attractive but, additionally, poses several key advantages, such as the tendency for negative nanowires to grow along a preferred etch direction inherently leading to arrays of negative nanowires with related alignment and orientation. Here, we present proof-of-principle experiments to show that SLV etching to synthesize negative nanowires can be performed in a nonreactive atmosphere and on single-crystalline zinc oxide and tin(IV) oxide substrates, demonstrating control over shape, size, alignment, and growth direction.
AB - Nanowires grown using the vapor-liquid-solid (VLS) mechanism are highly attractive components for functional nanomaterials since they grow along unique crystallographic axes to form defect-free single crystals with well-controlled dimensions. To date, however, these free-standing wires have been put to little use, since their ordered arrangement or placement is highly challenging. Here, we report an approach to create ordered arrays of nanoscale interfaces, in which we utilize the reverse of the VLS mechanism (the solid-liquid-vapor (SLV) mechanism) to etch the inverse of a nanowire, a "negative nanowire", into a single crystal. In this way, we achieve essentially the same array of crystallographic surfaces as would be achieved by growing a large array of nanowires but in a way that creates a single object which is easy to handle. The SLV mechanism is a unique approach in that it is governed by the same crystallography which makes the VLS mechanism attractive but, additionally, poses several key advantages, such as the tendency for negative nanowires to grow along a preferred etch direction inherently leading to arrays of negative nanowires with related alignment and orientation. Here, we present proof-of-principle experiments to show that SLV etching to synthesize negative nanowires can be performed in a nonreactive atmosphere and on single-crystalline zinc oxide and tin(IV) oxide substrates, demonstrating control over shape, size, alignment, and growth direction.
UR - http://www.scopus.com/inward/record.url?scp=85008485219&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85008485219&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.6b03374
DO - 10.1021/acs.chemmater.6b03374
M3 - Article
AN - SCOPUS:85008485219
SN - 0897-4756
VL - 28
SP - 8924
EP - 8929
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 24
ER -