Solution-processed low-voltage organic phototransistors based on an anthradithiophene molecular solid

Wenmin Guo, Yu Liu, Weiguo Huang, Marcia M. Payne, John Anthony, Howard E. Katz

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Low-voltage organic phototransistors (OPTs) are attractive candidates for optoelectronic applications such as photodetectors and memory devices. Here we describe a solution-processed low-voltage organic phototransistor based on a triethylgermylethynyl-substituted anthradithiophene (diF-TEG ADT). Two kinds of dielectric materials were used: 80-nm-thick potassium alumina (PA) and 300-nm-thick thermally grown SiO2. To investigate its application in a moist environment, the performance at different humidities was characterized. Results showed that the device was very stable in high humidity. A major change in drain current (IDS) was observed when connecting or disconnecting the gate electrode to the device. This feature may motivate the application of diF-TEG ADT-based phototransistors as multistage photo-controlled memory devices.

Original languageEnglish
Pages (from-to)3061-3069
Number of pages9
JournalOrganic Electronics
Volume15
Issue number11
DOIs
StatePublished - Nov 2014

Bibliographical note

Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.

Keywords

  • Anthradithiophene
  • OFET
  • Phototransistor
  • Potassium alumina

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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