Abstract
Low-voltage organic phototransistors (OPTs) are attractive candidates for optoelectronic applications such as photodetectors and memory devices. Here we describe a solution-processed low-voltage organic phototransistor based on a triethylgermylethynyl-substituted anthradithiophene (diF-TEG ADT). Two kinds of dielectric materials were used: 80-nm-thick potassium alumina (PA) and 300-nm-thick thermally grown SiO2. To investigate its application in a moist environment, the performance at different humidities was characterized. Results showed that the device was very stable in high humidity. A major change in drain current (IDS) was observed when connecting or disconnecting the gate electrode to the device. This feature may motivate the application of diF-TEG ADT-based phototransistors as multistage photo-controlled memory devices.
Original language | English |
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Pages (from-to) | 3061-3069 |
Number of pages | 9 |
Journal | Organic Electronics |
Volume | 15 |
Issue number | 11 |
DOIs | |
State | Published - Nov 2014 |
Bibliographical note
Funding Information:We are grateful to the National Science Foundation Division of Materials Research , Grant Number 1005398 for support of the work on the ion-incorporated alumina dielectric.
Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.
Keywords
- Anthradithiophene
- OFET
- Phototransistor
- Potassium alumina
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Chemistry (all)
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering