Solution-processed low-voltage organic phototransistors based on an anthradithiophene molecular solid

Wenmin Guo; Yu Liu; Weiguo Huang; Marcia M. Payne; John Anthony; Howard E. Katz

doi:10.1016/j.orgel.2014.08.048

Solution-processed low-voltage organic phototransistors based on an anthradithiophene molecular solid

Wenmin Guo, Yu Liu, Weiguo Huang, Marcia M. Payne, John Anthony, Howard E. Katz

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Low-voltage organic phototransistors (OPTs) are attractive candidates for optoelectronic applications such as photodetectors and memory devices. Here we describe a solution-processed low-voltage organic phototransistor based on a triethylgermylethynyl-substituted anthradithiophene (diF-TEG ADT). Two kinds of dielectric materials were used: 80-nm-thick potassium alumina (PA) and 300-nm-thick thermally grown SiO₂. To investigate its application in a moist environment, the performance at different humidities was characterized. Results showed that the device was very stable in high humidity. A major change in drain current (I_DS) was observed when connecting or disconnecting the gate electrode to the device. This feature may motivate the application of diF-TEG ADT-based phototransistors as multistage photo-controlled memory devices.

Original language	English
Pages (from-to)	3061-3069
Number of pages	9
Journal	Organic Electronics
Volume	15
Issue number	11
DOIs	https://doi.org/10.1016/j.orgel.2014.08.048
State	Published - Nov 2014

Bibliographical note

Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.

Funding

We are grateful to the National Science Foundation Division of Materials Research , Grant Number 1005398 for support of the work on the ion-incorporated alumina dielectric.

Funders	Funder number
National Science Foundation Division of Materials Research	1005398

Keywords

Anthradithiophene
OFET
Phototransistor
Potassium alumina

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.orgel.2014.08.048

Cite this

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title = "Solution-processed low-voltage organic phototransistors based on an anthradithiophene molecular solid",

abstract = "Low-voltage organic phototransistors (OPTs) are attractive candidates for optoelectronic applications such as photodetectors and memory devices. Here we describe a solution-processed low-voltage organic phototransistor based on a triethylgermylethynyl-substituted anthradithiophene (diF-TEG ADT). Two kinds of dielectric materials were used: 80-nm-thick potassium alumina (PA) and 300-nm-thick thermally grown SiO2. To investigate its application in a moist environment, the performance at different humidities was characterized. Results showed that the device was very stable in high humidity. A major change in drain current (IDS) was observed when connecting or disconnecting the gate electrode to the device. This feature may motivate the application of diF-TEG ADT-based phototransistors as multistage photo-controlled memory devices.",

keywords = "Anthradithiophene, OFET, Phototransistor, Potassium alumina",

author = "Wenmin Guo and Yu Liu and Weiguo Huang and Payne, \{Marcia M.\} and John Anthony and Katz, \{Howard E.\}",

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T1 - Solution-processed low-voltage organic phototransistors based on an anthradithiophene molecular solid

AU - Guo, Wenmin

AU - Liu, Yu

AU - Huang, Weiguo

AU - Payne, Marcia M.

AU - Anthony, John

AU - Katz, Howard E.

PY - 2014/11

Y1 - 2014/11

N2 - Low-voltage organic phototransistors (OPTs) are attractive candidates for optoelectronic applications such as photodetectors and memory devices. Here we describe a solution-processed low-voltage organic phototransistor based on a triethylgermylethynyl-substituted anthradithiophene (diF-TEG ADT). Two kinds of dielectric materials were used: 80-nm-thick potassium alumina (PA) and 300-nm-thick thermally grown SiO2. To investigate its application in a moist environment, the performance at different humidities was characterized. Results showed that the device was very stable in high humidity. A major change in drain current (IDS) was observed when connecting or disconnecting the gate electrode to the device. This feature may motivate the application of diF-TEG ADT-based phototransistors as multistage photo-controlled memory devices.

AB - Low-voltage organic phototransistors (OPTs) are attractive candidates for optoelectronic applications such as photodetectors and memory devices. Here we describe a solution-processed low-voltage organic phototransistor based on a triethylgermylethynyl-substituted anthradithiophene (diF-TEG ADT). Two kinds of dielectric materials were used: 80-nm-thick potassium alumina (PA) and 300-nm-thick thermally grown SiO2. To investigate its application in a moist environment, the performance at different humidities was characterized. Results showed that the device was very stable in high humidity. A major change in drain current (IDS) was observed when connecting or disconnecting the gate electrode to the device. This feature may motivate the application of diF-TEG ADT-based phototransistors as multistage photo-controlled memory devices.

KW - Anthradithiophene

KW - OFET

KW - Phototransistor

KW - Potassium alumina

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Solution-processed low-voltage organic phototransistors based on an anthradithiophene molecular solid

Abstract

Bibliographical note

Funding

Keywords

ASJC Scopus subject areas

Access to Document

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