Solution-processed molecular bis(naphthalene diimide) derivatives with high electron mobility

Lauren E. Polander, Shree P. Tiwari, Laxman Pandey, Brian M. Seifried, Qing Zhang, Stephen Barlow, Chad Risko, Jean Luc Brédas, Bernard Kippelen, Seth R. Marder

Research output: Contribution to journalArticlepeer-review

104 Scopus citations


Top-gate bottom-contact field-effect transistors based on solution-processed films of molecules in which two naphthalene-1,8:4,5- bis(dicarboxdiimide)s are bridged by thieno[3,2-b]thiophene, dithieno[3,2-b:2′,3′-d]thiophene and dithieno[3,2-b:2′, 3′-d]pyrrole exhibit electron mobility values of up to 1.5 cm2 V-1 s-1.

Original languageEnglish
Pages (from-to)3408-3410
Number of pages3
JournalChemistry of Materials
Issue number15
StatePublished - Aug 9 2011


  • electronic materials
  • naphthalene diimide
  • organic semiconductors

ASJC Scopus subject areas

  • Chemistry (all)
  • Chemical Engineering (all)
  • Materials Chemistry


Dive into the research topics of 'Solution-processed molecular bis(naphthalene diimide) derivatives with high electron mobility'. Together they form a unique fingerprint.

Cite this