TY - JOUR
T1 - Solution-processed molecular bis(naphthalene diimide) derivatives with high electron mobility
AU - Polander, Lauren E.
AU - Tiwari, Shree P.
AU - Pandey, Laxman
AU - Seifried, Brian M.
AU - Zhang, Qing
AU - Barlow, Stephen
AU - Risko, Chad
AU - Brédas, Jean Luc
AU - Kippelen, Bernard
AU - Marder, Seth R.
PY - 2011/8/9
Y1 - 2011/8/9
N2 - Top-gate bottom-contact field-effect transistors based on solution-processed films of molecules in which two naphthalene-1,8:4,5- bis(dicarboxdiimide)s are bridged by thieno[3,2-b]thiophene, dithieno[3,2-b:2′,3′-d]thiophene and dithieno[3,2-b:2′, 3′-d]pyrrole exhibit electron mobility values of up to 1.5 cm2 V-1 s-1.
AB - Top-gate bottom-contact field-effect transistors based on solution-processed films of molecules in which two naphthalene-1,8:4,5- bis(dicarboxdiimide)s are bridged by thieno[3,2-b]thiophene, dithieno[3,2-b:2′,3′-d]thiophene and dithieno[3,2-b:2′, 3′-d]pyrrole exhibit electron mobility values of up to 1.5 cm2 V-1 s-1.
KW - electronic materials
KW - naphthalene diimide
KW - organic semiconductors
UR - https://www.scopus.com/pages/publications/79961063509
UR - https://www.scopus.com/pages/publications/79961063509#tab=citedBy
U2 - 10.1021/cm201729s
DO - 10.1021/cm201729s
M3 - Article
AN - SCOPUS:79961063509
SN - 0897-4756
VL - 23
SP - 3408
EP - 3410
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 15
ER -