TY - JOUR
T1 - Solution-Processed Organic and Halide Perovskite Transistors on Hydrophobic Surfaces
AU - Ward, Jeremy W.
AU - Smith, Hannah L.
AU - Zeidell, Andrew
AU - Diemer, Peter J.
AU - Baker, Stephen R.
AU - Lee, Hyunsu
AU - Payne, Marcia M.
AU - Anthony, John E.
AU - Guthold, Martin
AU - Jurchescu, Oana D.
N1 - Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/5/31
Y1 - 2017/5/31
N2 - Solution-processable electronic devices are highly desirable due to their low cost and compatibility with flexible substrates. However, they are often challenging to fabricate due to the hydrophobic nature of the surfaces of the constituent layers. Here, we use a protein solution to modify the surface properties and to improve the wettability of the fluoropolymer dielectric Cytop. The engineered hydrophilic surface is successfully incorporated in bottom-gate solution-deposited organic field-effect transistors (OFETs) and hybrid organic-inorganic trihalide perovskite field-effect transistors (HTP-FETs) fabricated on flexible substrates. Our analysis of the density of trapping states at the semiconductor-dielectric interface suggests that the increase in the trap density as a result of the chemical treatment is minimal. As a result, the devices exhibit good charge carrier mobilities, near-zero threshold voltages, and low electrical hysteresis.
AB - Solution-processable electronic devices are highly desirable due to their low cost and compatibility with flexible substrates. However, they are often challenging to fabricate due to the hydrophobic nature of the surfaces of the constituent layers. Here, we use a protein solution to modify the surface properties and to improve the wettability of the fluoropolymer dielectric Cytop. The engineered hydrophilic surface is successfully incorporated in bottom-gate solution-deposited organic field-effect transistors (OFETs) and hybrid organic-inorganic trihalide perovskite field-effect transistors (HTP-FETs) fabricated on flexible substrates. Our analysis of the density of trapping states at the semiconductor-dielectric interface suggests that the increase in the trap density as a result of the chemical treatment is minimal. As a result, the devices exhibit good charge carrier mobilities, near-zero threshold voltages, and low electrical hysteresis.
KW - charge carrier mobility
KW - flexible electronics
KW - halide perovskites
KW - organic semiconductors
KW - organic thin-film transistors
UR - http://www.scopus.com/inward/record.url?scp=85019970980&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85019970980&partnerID=8YFLogxK
U2 - 10.1021/acsami.7b03232
DO - 10.1021/acsami.7b03232
M3 - Article
C2 - 28485580
AN - SCOPUS:85019970980
SN - 1944-8244
VL - 9
SP - 18120
EP - 18126
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 21
ER -