Solvent annealing of PbI2 for the high-quality crystallization of perovskite films for solar cells with efficiencies exceeding 18%

Yafei Wang, Shibin Li, Peng Zhang, Detao Liu, Xiangling Gu, Hojjatollah Sarvari, Zongbiao Ye, Jiang Wu, Zhiming Wang, Zhi David Chen

Research output: Contribution to journalArticlepeer-review

88 Scopus citations

Abstract

While most work carried out to date has focused on the solvent annealing of perovskite, in the present work, we focused on the solvent annealing of lead iodide. Based on the two-step spin-coating method, we designed a screening method to search for an effective solvent annealing process for PbI2. PbI2 films were annealed in diverse solvent atmospheres, including DMF, DMSO, acetone, and isopropanol (IPA). We found that the solvent annealing of PbI2 in the DMF, acetone, and IPA atmospheres resulted in dense PbI2 films, which impeded the complete conversion of PbI2 to CH3NH3PbI3. Surprisingly, employing the DMSO solvent annealing process for PbI2 led to porous PbI2, which facilitated the complete conversion of PbI2 to perovskite with larger grain sizes. Solar cells fabricated using the DMSO solvent annealing process exhibited the best efficiency of 18.5%, with a fill factor of 76.5%. This unique solvent annealing method presents a new way of controlling the perovskite film quality for highly efficient solar cells.

Original languageEnglish
Pages (from-to)19654-19661
Number of pages8
JournalNanoscale
Volume8
Issue number47
DOIs
StatePublished - Dec 21 2016

Bibliographical note

Publisher Copyright:
© 2016 The Royal Society of Chemistry.

Funding

This work was supported by the National Natural Science Foundation of China under Grant No. 61474016 and 61405026, 61371046, 61421002, 6157031208, 61471085, and National Higher-education Institution General Research and Development Fund (ZYGX2014J044), Projects of International Cooperation of Sichuan Province (no. 2014HH0041). This work was also partially supported by the University of Kentucky and Advanced Semiconductor Processing Technology, LLC.

FundersFunder number
International Cooperation of Sichuan Province2014HH0041
National Higher-education Institution General Research and Development FundZYGX2014J044
University of Kentucky and Advanced Semiconductor Processing Technology, LLC
National Natural Science Foundation of China (NSFC)61471085, 61474016, 6157031208, 61371046, 61405026, 61421002

    ASJC Scopus subject areas

    • General Materials Science

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