TY - JOUR
T1 - Static and low-frequency shear compliance of TaS3
AU - Zhan, X.
AU - Brill, J. W.
PY - 1995
Y1 - 1995
N2 - We have measured torsional strains in the charge-density-wave (CDW) conductor TaS3 as functions of stress (i.e., torque), stress frequency (2 mHz to 20 Hz), and sample voltage. At all frequencies, the compliance is observed to increase by 25% when the voltage is increased above the threshold for CDW depinning, implying that the time constant for CDW relaxation in the pinned state is 84 s. Above 30 mHz, the depinned compliance has a slow frequency dependence, implying a large distribution of relaxation times extending to at least 5 s. We also observe a current-reversible strain-memory effect, which may account for the failure of previous investigators to observe static elastic softening when the CDW is depinned.
AB - We have measured torsional strains in the charge-density-wave (CDW) conductor TaS3 as functions of stress (i.e., torque), stress frequency (2 mHz to 20 Hz), and sample voltage. At all frequencies, the compliance is observed to increase by 25% when the voltage is increased above the threshold for CDW depinning, implying that the time constant for CDW relaxation in the pinned state is 84 s. Above 30 mHz, the depinned compliance has a slow frequency dependence, implying a large distribution of relaxation times extending to at least 5 s. We also observe a current-reversible strain-memory effect, which may account for the failure of previous investigators to observe static elastic softening when the CDW is depinned.
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U2 - 10.1103/PhysRevB.52.R8601
DO - 10.1103/PhysRevB.52.R8601
M3 - Article
AN - SCOPUS:0002640282
SN - 0163-1829
VL - 52
SP - R8601-R8604
JO - Physical Review B
JF - Physical Review B
IS - 12
ER -