Stress dependence of the charge-density-wave transitions in NbSe3 and TaS3

R. S. Lear, M. J. Skove, E. P. Stillwell, J. W. Brill

Research output: Contribution to journalArticlepeer-review

45 Scopus citations

Abstract

We have measured the change in the charge-density-wave (CDW) transitions in monoclinic NbSe3 and orthorhombic TaS3 caused by stress applied along the high-symmetry (growth) axis. For the upper transition in NbSe3, dT1d=-4.4 K/GPa for stresses up to 5 GPa, the increase in the resistance due to the transition, R, is almost unaffected, and the critical field for motion of the CDW, Ec, increases with stress. For the lower transition in NbSe3, dT2d=-0.4 K/GPa, R more than doubles at 5 GPa, and Ec is relatively unaffected. The 222-K transition in TaS3 decreases at a rate of -15 K/GPa for low stresses. At stresses above 2.5 GPa the resistance of TaS3 begins to increase again, possibly due to a second stress-induced CDW transition. Both thermal hysteresis and stress hysteresis are seen in TaS3 between about 100 and 200 K.

Original languageEnglish
Pages (from-to)5656-5662
Number of pages7
JournalPhysical Review B
Volume29
Issue number10
DOIs
StatePublished - 1984

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Stress dependence of the charge-density-wave transitions in NbSe3 and TaS3'. Together they form a unique fingerprint.

Cite this