Stress effect on bandgap change of a semiconductor nanocrystal in an elastic matrix

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Abstract

In this work, we study the bandgap change of a spherical semiconductor nanoparticle in an elastic matrix under the framework of linear elasticity. There are two important ratios – one is the ratio of interface energy between the nanoparticle-solution interface and the nanoparticle-matrix interface, and the other is the ratio of elastic modulus between the nanoparticle and the elastic matrix. Without external loading, the bandgap change is dependent on both ratios. Under a hydrostatic strain or a simple shear strain, the bandgap change decreases with increasing the ratio of the elastic modulus of the nanoparticle to that of the elastic matrix. Under simple shear strain, the bandgap change is orientation-dependent.

Original languageEnglish
Article number127931
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume428
DOIs
StatePublished - Mar 4 2022

Bibliographical note

Publisher Copyright:
© 2022 Elsevier B.V.

Keywords

  • Bandgap change
  • Elastic matrix
  • Interface stress/energy
  • Mechanical deformation

ASJC Scopus subject areas

  • General Physics and Astronomy

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