Stress effect on bandgap change of a semiconductor nanocrystal in an elastic matrix

Fuqian Yang

doi:10.1016/j.physleta.2022.127931

Stress effect on bandgap change of a semiconductor nanocrystal in an elastic matrix

Fuqian Yang

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this work, we study the bandgap change of a spherical semiconductor nanoparticle in an elastic matrix under the framework of linear elasticity. There are two important ratios – one is the ratio of interface energy between the nanoparticle-solution interface and the nanoparticle-matrix interface, and the other is the ratio of elastic modulus between the nanoparticle and the elastic matrix. Without external loading, the bandgap change is dependent on both ratios. Under a hydrostatic strain or a simple shear strain, the bandgap change decreases with increasing the ratio of the elastic modulus of the nanoparticle to that of the elastic matrix. Under simple shear strain, the bandgap change is orientation-dependent.

Original language	English
Article number	127931
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	428
DOIs	https://doi.org/10.1016/j.physleta.2022.127931
State	Published - Mar 4 2022

Bibliographical note

Publisher Copyright:
© 2022 Elsevier B.V.

Funding

FY is grateful for the support by the NSF through the grant CBET-2018411 monitored by Dr. Nora F Savage.

Funders	Funder number
National Science Foundation Arctic Social Science Program	CBET-2018411

Keywords

Bandgap change
Elastic matrix
Interface stress/energy
Mechanical deformation

ASJC Scopus subject areas

General Physics and Astronomy

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10.1016/j.physleta.2022.127931

Cite this

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abstract = "In this work, we study the bandgap change of a spherical semiconductor nanoparticle in an elastic matrix under the framework of linear elasticity. There are two important ratios – one is the ratio of interface energy between the nanoparticle-solution interface and the nanoparticle-matrix interface, and the other is the ratio of elastic modulus between the nanoparticle and the elastic matrix. Without external loading, the bandgap change is dependent on both ratios. Under a hydrostatic strain or a simple shear strain, the bandgap change decreases with increasing the ratio of the elastic modulus of the nanoparticle to that of the elastic matrix. Under simple shear strain, the bandgap change is orientation-dependent.",

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AB - In this work, we study the bandgap change of a spherical semiconductor nanoparticle in an elastic matrix under the framework of linear elasticity. There are two important ratios – one is the ratio of interface energy between the nanoparticle-solution interface and the nanoparticle-matrix interface, and the other is the ratio of elastic modulus between the nanoparticle and the elastic matrix. Without external loading, the bandgap change is dependent on both ratios. Under a hydrostatic strain or a simple shear strain, the bandgap change decreases with increasing the ratio of the elastic modulus of the nanoparticle to that of the elastic matrix. Under simple shear strain, the bandgap change is orientation-dependent.

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KW - Interface stress/energy

KW - Mechanical deformation

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VL - 428

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

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ER -

Stress effect on bandgap change of a semiconductor nanocrystal in an elastic matrix

Abstract

Bibliographical note

Funding

Keywords

ASJC Scopus subject areas

Access to Document

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