Stress-induced growth of bismuth nanowires

Yang Tse Cheng, Anita M. Weiner, Curtis A. Wong, Michael P. Balogh, Michael J. Lukitsch

Research output: Contribution to journalArticlepeer-review

76 Scopus citations


We report a method of making nanowires of bismuth (Bi) with diameters ranging from 30 to 200 nm and lengths up to several millimeters. The nanowires are extruded spontaneously at the rate of a few micrometers per second at room temperature from the surfaces of freshly grown composite thin films consisting of Bi and chrome-nitride. The high compressive stress in these composite thin films is the driving force responsible for the nanowire formation. This mechanism can also be used to create nanowires of other materials.

Original languageEnglish
Pages (from-to)3248-3250
Number of pages3
JournalApplied Physics Letters
Issue number17
StatePublished - Oct 21 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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