Stress-induced growth of bismuth nanowires

Yang Tse Cheng; Anita M. Weiner; Curtis A. Wong; Michael P. Balogh; Michael J. Lukitsch

doi:10.1063/1.1515885

Stress-induced growth of bismuth nanowires

Yang Tse Cheng, Anita M. Weiner, Curtis A. Wong, Michael P. Balogh, Michael J. Lukitsch

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78 Scopus citations

Abstract

We report a method of making nanowires of bismuth (Bi) with diameters ranging from 30 to 200 nm and lengths up to several millimeters. The nanowires are extruded spontaneously at the rate of a few micrometers per second at room temperature from the surfaces of freshly grown composite thin films consisting of Bi and chrome-nitride. The high compressive stress in these composite thin films is the driving force responsible for the nanowire formation. This mechanism can also be used to create nanowires of other materials.

Original language	English
Pages (from-to)	3248-3250
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	17
DOIs	https://doi.org/10.1063/1.1515885
State	Published - Oct 21 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We report a method of making nanowires of bismuth (Bi) with diameters ranging from 30 to 200 nm and lengths up to several millimeters. The nanowires are extruded spontaneously at the rate of a few micrometers per second at room temperature from the surfaces of freshly grown composite thin films consisting of Bi and chrome-nitride. The high compressive stress in these composite thin films is the driving force responsible for the nanowire formation. This mechanism can also be used to create nanowires of other materials.",

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AU - Weiner, Anita M.

AU - Wong, Curtis A.

AU - Balogh, Michael P.

AU - Lukitsch, Michael J.

PY - 2002/10/21

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AB - We report a method of making nanowires of bismuth (Bi) with diameters ranging from 30 to 200 nm and lengths up to several millimeters. The nanowires are extruded spontaneously at the rate of a few micrometers per second at room temperature from the surfaces of freshly grown composite thin films consisting of Bi and chrome-nitride. The high compressive stress in these composite thin films is the driving force responsible for the nanowire formation. This mechanism can also be used to create nanowires of other materials.

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Stress-induced growth of bismuth nanowires

Abstract

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