Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors

Chang Hyun Kim, Htay Hlaing, Marcia M. Payne, Kevin G. Yager, Yvan Bonnassieux, Gilles Horowitz, John E. Anthony, Ioannis Kymissis

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro-to-nanoscale investigation on the crystal growth of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene (diF-TEG-ADT) and its implication for the electrical behavior of organic field-effect transistors (OFETs). diF-TEG-ADT exhibits remarkable self-assembly through spin-cast preparation, with highly aligned edge-on stacking creating a fast hole-conducting channel for OFETs.

Original languageEnglish
Pages (from-to)2913-2916
Number of pages4
JournalChemPhysChem
Volume15
Issue number14
DOIs
StatePublished - Oct 6 2014

Bibliographical note

Publisher Copyright:
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords

  • charge transport
  • crystallinity
  • diF-TEG-ADT
  • field-effect transistors
  • semiconductors

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry

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