Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors

Chang Hyun Kim; Htay Hlaing; Marcia M. Payne; Kevin G. Yager; Yvan Bonnassieux; Gilles Horowitz; John E. Anthony; Ioannis Kymissis

doi:10.1002/cphc.201402360

Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors

Chang Hyun Kim, Htay Hlaing, Marcia M. Payne, Kevin G. Yager, Yvan Bonnassieux, Gilles Horowitz, John E. Anthony, Ioannis Kymissis

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro-to-nanoscale investigation on the crystal growth of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene (diF-TEG-ADT) and its implication for the electrical behavior of organic field-effect transistors (OFETs). diF-TEG-ADT exhibits remarkable self-assembly through spin-cast preparation, with highly aligned edge-on stacking creating a fast hole-conducting channel for OFETs.

Original language	English
Pages (from-to)	2913-2916
Number of pages	4
Journal	ChemPhysChem
Volume	15
Issue number	14
DOIs	https://doi.org/10.1002/cphc.201402360
State	Published - Oct 6 2014

Bibliographical note

Publisher Copyright:
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Funding

C.H.K. acknowledges financial and administrative support from Ecole Polytechnique and Alliance Program. I.K. , H.H., and overall project coordination, as well as sample growth and characterization were supported as part of the Center for Re-Defining Photovoltaic Efficiency Through Molecular-Scale Control, an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences under Award DE-SC0001085. Research carried out at the Center for Functional Nanomaterials and the National Synchrotron Light Source, Brookhaven National Laboratory, is supported by the U.S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02–98CH10886. J.E.A. and M.M.P. thank the National Science Foundation (DMR-1035257) for support of crystalline organic semiconductor development.

Funders	Funder number
National Synchrotron Light Source	DE-AC02–98CH10886
National Science Foundation (NSF)	1035257, DMR-1035257
Michigan State University-U.S. Department of Energy (MSU-DOE) Plant Research Laboratory
Office of Science Programs
Office of Basic Energy Sciences	DE-SC0001085

Keywords

charge transport
crystallinity
diF-TEG-ADT
field-effect transistors
semiconductors

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Physical and Theoretical Chemistry

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10.1002/cphc.201402360

Cite this

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title = "Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors",

abstract = "The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro-to-nanoscale investigation on the crystal growth of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene (diF-TEG-ADT) and its implication for the electrical behavior of organic field-effect transistors (OFETs). diF-TEG-ADT exhibits remarkable self-assembly through spin-cast preparation, with highly aligned edge-on stacking creating a fast hole-conducting channel for OFETs.",

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AU - Hlaing, Htay

AU - Payne, Marcia M.

AU - Yager, Kevin G.

AU - Bonnassieux, Yvan

AU - Horowitz, Gilles

AU - Anthony, John E.

AU - Kymissis, Ioannis

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AB - The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro-to-nanoscale investigation on the crystal growth of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene (diF-TEG-ADT) and its implication for the electrical behavior of organic field-effect transistors (OFETs). diF-TEG-ADT exhibits remarkable self-assembly through spin-cast preparation, with highly aligned edge-on stacking creating a fast hole-conducting channel for OFETs.

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Strongly Correlated Alignment of Fluorinated 5,11-Bis(triethylgermylethynyl)anthradithiophene Crystallites in Solution-Processed Field-Effect Transistors

Abstract

Bibliographical note

Funding

Keywords

ASJC Scopus subject areas

Access to Document

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