Structural and compositional variations in ZnSnP2/GaAs superlattices

B. Lita; M. Beck; R. S. Goldman; G. A. Seryogin; S. A. Nikishin; H. Temkin

doi:10.1063/1.1320463

Structural and compositional variations in ZnSnP₂/GaAs superlattices

B. Lita, M. Beck, R. S. Goldman, G. A. Seryogin, S. A. Nikishin, H. Temkin

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Abstract

We have investigated the structural and compositional uniformity of a set of ZnSnP₂/GaAs superlattices grown by gas-source molecular-beam epitaxy. Cross-sectional scanning tunneling microscopy reveals an asymmetry in interface abruptness, with the ZnSnP₂ on GaAs interfaces apparently much smoother than the GaAs on ZnSnP₂ interfaces. The increased roughness of the GaAs on ZnSnP₂ interface occurs simultaneously with the apparent surface segregation of Sn. High-resolution x-ray diffraction and photoluminescence spectroscopy suggest that the ZnSnP₂ regions consist of a mixture of ZnSnP₂ and ZnSnAs₂. This is further confirmed by cross-sectional scanning tunneling microscopy and spectroscopy, which reveal the presence of nanometer-scale ZnSnP₂ and ZnSnAs₂-rich regions. Interestingly, these lateral compositional variations are not correlated with observed growth front undulations.

Original language	English
Pages (from-to)	2894-2896
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	18
DOIs	https://doi.org/10.1063/1.1320463
State	Published - Oct 30 2000

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Structural and compositional variations in ZnSnP2/GaAs superlattices",

abstract = "We have investigated the structural and compositional uniformity of a set of ZnSnP2/GaAs superlattices grown by gas-source molecular-beam epitaxy. Cross-sectional scanning tunneling microscopy reveals an asymmetry in interface abruptness, with the ZnSnP2 on GaAs interfaces apparently much smoother than the GaAs on ZnSnP2 interfaces. The increased roughness of the GaAs on ZnSnP2 interface occurs simultaneously with the apparent surface segregation of Sn. High-resolution x-ray diffraction and photoluminescence spectroscopy suggest that the ZnSnP2 regions consist of a mixture of ZnSnP2 and ZnSnAs2. This is further confirmed by cross-sectional scanning tunneling microscopy and spectroscopy, which reveal the presence of nanometer-scale ZnSnP2 and ZnSnAs2-rich regions. Interestingly, these lateral compositional variations are not correlated with observed growth front undulations.",

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T1 - Structural and compositional variations in ZnSnP2/GaAs superlattices

AU - Lita, B.

AU - Beck, M.

AU - Goldman, R. S.

AU - Seryogin, G. A.

AU - Nikishin, S. A.

AU - Temkin, H.

PY - 2000/10/30

Y1 - 2000/10/30

N2 - We have investigated the structural and compositional uniformity of a set of ZnSnP2/GaAs superlattices grown by gas-source molecular-beam epitaxy. Cross-sectional scanning tunneling microscopy reveals an asymmetry in interface abruptness, with the ZnSnP2 on GaAs interfaces apparently much smoother than the GaAs on ZnSnP2 interfaces. The increased roughness of the GaAs on ZnSnP2 interface occurs simultaneously with the apparent surface segregation of Sn. High-resolution x-ray diffraction and photoluminescence spectroscopy suggest that the ZnSnP2 regions consist of a mixture of ZnSnP2 and ZnSnAs2. This is further confirmed by cross-sectional scanning tunneling microscopy and spectroscopy, which reveal the presence of nanometer-scale ZnSnP2 and ZnSnAs2-rich regions. Interestingly, these lateral compositional variations are not correlated with observed growth front undulations.

AB - We have investigated the structural and compositional uniformity of a set of ZnSnP2/GaAs superlattices grown by gas-source molecular-beam epitaxy. Cross-sectional scanning tunneling microscopy reveals an asymmetry in interface abruptness, with the ZnSnP2 on GaAs interfaces apparently much smoother than the GaAs on ZnSnP2 interfaces. The increased roughness of the GaAs on ZnSnP2 interface occurs simultaneously with the apparent surface segregation of Sn. High-resolution x-ray diffraction and photoluminescence spectroscopy suggest that the ZnSnP2 regions consist of a mixture of ZnSnP2 and ZnSnAs2. This is further confirmed by cross-sectional scanning tunneling microscopy and spectroscopy, which reveal the presence of nanometer-scale ZnSnP2 and ZnSnAs2-rich regions. Interestingly, these lateral compositional variations are not correlated with observed growth front undulations.

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Structural and compositional variations in ZnSnP₂/GaAs superlattices

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