Suppression of the energy gap in SmB6 under pressure

J. Beille, M. B. Maple, J. Wittig, Z. Fisk, L. E. DeLong

Research output: Contribution to journalArticlepeer-review

55 Scopus citations


The electrical resistance R of SmB6 as a function of temperature T and pressure P has been measured in the range 1 K<∼T<∼300 K and 0< 220 kbar. The behavior of R(T) changes continuously from that of a narrow gap semiconductor to that of a metal in the range of 0< 70 kbar. The dependence of R on T and P can be analyzed phenomenologically within the context of a thermal activation model with an activation energy that decreases linearly with pressure from 33 K at zero pressure to zero at 70 kbar. The data resemble those of SmS and SmSe under pressure and suggest a general behavior of R(T,P) for intermediate-valence Sm compounds.

Original languageEnglish
Pages (from-to)7397-7400
Number of pages4
JournalPhysical Review B
Issue number12
StatePublished - 1983

ASJC Scopus subject areas

  • Condensed Matter Physics


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