Suppression of the energy gap in SmB6 under pressure

J. Beille; M. B. Maple; J. Wittig; Z. Fisk; L. E. DeLong

doi:10.1103/PhysRevB.28.7397

Suppression of the energy gap in SmB6 under pressure

J. Beille, M. B. Maple, J. Wittig, Z. Fisk, L. E. DeLong

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Abstract

The electrical resistance R of SmB6 as a function of temperature T and pressure P has been measured in the range 1 K<∼T<∼300 K and 0< 220 kbar. The behavior of R(T) changes continuously from that of a narrow gap semiconductor to that of a metal in the range of 0< 70 kbar. The dependence of R on T and P can be analyzed phenomenologically within the context of a thermal activation model with an activation energy that decreases linearly with pressure from 33 K at zero pressure to zero at 70 kbar. The data resemble those of SmS and SmSe under pressure and suggest a general behavior of R(T,P) for intermediate-valence Sm compounds.

Original language	English
Pages (from-to)	7397-7400
Number of pages	4
Journal	Physical Review B
Volume	28
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.28.7397
State	Published - 1983

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Condensed Matter Physics

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10.1103/PhysRevB.28.7397

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title = "Suppression of the energy gap in SmB6 under pressure",

abstract = "The electrical resistance R of SmB6 as a function of temperature T and pressure P has been measured in the range 1 K<∼T<∼300 K and 0< 220 kbar. The behavior of R(T) changes continuously from that of a narrow gap semiconductor to that of a metal in the range of 0< 70 kbar. The dependence of R on T and P can be analyzed phenomenologically within the context of a thermal activation model with an activation energy that decreases linearly with pressure from 33 K at zero pressure to zero at 70 kbar. The data resemble those of SmS and SmSe under pressure and suggest a general behavior of R(T,P) for intermediate-valence Sm compounds.",

author = "J. Beille and Maple, \{M. B.\} and J. Wittig and Z. Fisk and DeLong, \{L. E.\}",

year = "1983",

doi = "10.1103/PhysRevB.28.7397",

language = "English",

volume = "28",

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T1 - Suppression of the energy gap in SmB6 under pressure

AU - Beille, J.

AU - Maple, M. B.

AU - Wittig, J.

AU - Fisk, Z.

AU - DeLong, L. E.

PY - 1983

Y1 - 1983

N2 - The electrical resistance R of SmB6 as a function of temperature T and pressure P has been measured in the range 1 K<∼T<∼300 K and 0< 220 kbar. The behavior of R(T) changes continuously from that of a narrow gap semiconductor to that of a metal in the range of 0< 70 kbar. The dependence of R on T and P can be analyzed phenomenologically within the context of a thermal activation model with an activation energy that decreases linearly with pressure from 33 K at zero pressure to zero at 70 kbar. The data resemble those of SmS and SmSe under pressure and suggest a general behavior of R(T,P) for intermediate-valence Sm compounds.

AB - The electrical resistance R of SmB6 as a function of temperature T and pressure P has been measured in the range 1 K<∼T<∼300 K and 0< 220 kbar. The behavior of R(T) changes continuously from that of a narrow gap semiconductor to that of a metal in the range of 0< 70 kbar. The dependence of R on T and P can be analyzed phenomenologically within the context of a thermal activation model with an activation energy that decreases linearly with pressure from 33 K at zero pressure to zero at 70 kbar. The data resemble those of SmS and SmSe under pressure and suggest a general behavior of R(T,P) for intermediate-valence Sm compounds.

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DO - 10.1103/PhysRevB.28.7397

M3 - Article

AN - SCOPUS:0001610310

SN - 0163-1829

VL - 28

SP - 7397

EP - 7400

JO - Physical Review B

JF - Physical Review B

IS - 12

ER -

Suppression of the energy gap in SmB6 under pressure

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