Systematic reliability study of top-gate p- and n-channel organic field-effect transistors

Do Kyung Hwang, Canek Fuentes-Hernandez, Mathieu Fenoll, Minseong Yun, Jihoon Park, Jae Won Shim, Keith A. Knauer, Amir Dindar, Hyungchul Kim, Yongjin Kim, Jungbae Kim, Hyeunseok Cheun, Marcia M. Payne, Samuel Graham, Seongil Im, John E. Anthony, Bernard Kippelen

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


We report on a systematic investigation on the performance and stability of p-channel and n-channel top-gate OFETs, with a CYTOP/Al2O 3 bilayer gate dielectric, exposed to controlled dry oxygen and humid atmospheres. Despite the severe conditions of environmental exposure, p-channel and n-channel top-gate OFETs show only minor changes of their performance parameters without undergoing irreversible damage. When correlated with the conditions of environmental exposure, these changes provide new insight into the possible physical mechanisms in the presence of oxygen and water. Photoexcited charge collection spectroscopy experiments provided further evidence of oxygen and water effects on OFETs. Top-gate OFETs also display outstanding durability, even when exposed to oxygen plasma and subsequent immersion in water or operated under aqueous media. These remarkable properties arise as a consequence of the use of relatively air stable organic semiconductors and proper engineering of the OFET structure.

Original languageEnglish
Pages (from-to)3378-3386
Number of pages9
JournalACS Applied Materials and Interfaces
Issue number5
StatePublished - Mar 12 2014


  • device reliability
  • organic electronics
  • organic field-effect transistors
  • photoexcited charge collection spectroscopy
  • soluble organic semiconductor

ASJC Scopus subject areas

  • Materials Science (all)


Dive into the research topics of 'Systematic reliability study of top-gate p- and n-channel organic field-effect transistors'. Together they form a unique fingerprint.

Cite this