TES anthradithiophene solution-processed OTFTs with 1 cm2/V-s mobility

Research output: Contribution to journalConference articlepeer-review

23 Scopus citations

Abstract

We have fabricated solution processed organic thin film transistors (OTFTs) based on triethylsilylethynyl anthradithiophene (TES anthradithiophene) with 1 cm2/V-s mobility. The devices also have current on/off ratio > 107 and subthreshold slope near 1 V/decade. To our knowledge, these are the highest mobility solution-processed OTFTs reported to date and the first with performance comparable to thermally evaporated pentacene devices.

Original languageEnglish
Pages (from-to)373-376
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 2004
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: Dec 13 2004Dec 15 2004

Bibliographical note

Funding Information:
This work was supported by Kodak and an NSF MRSEC.

Funding

This work was supported by Kodak and an NSF MRSEC.

Funders
Materials Research Science and Engineering Center, Harvard University

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

    Fingerprint

    Dive into the research topics of 'TES anthradithiophene solution-processed OTFTs with 1 cm2/V-s mobility'. Together they form a unique fingerprint.

    Cite this