Abstract
Polymer ferroelectrics are playing an increasingly active role in flexible memory application and wearable electronics. The relaxor ferroelectric dielectric, poly(vinylidene fluoride trifluorethylene (PVDF-TrFE), although vastly used in organic field-effect transistors (FETs), has issues with gate leakage current especially when the film thickness is below 500 nm. This work demonstrates a novel method of selective poling the dielectric layer. By using solution-processed 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) as the organic semiconductor, it is shown that textured poling of the PVDF-TrFE layer dramatically improves FET properties compared to unpoled or uniformly poled ferroelectric films. The texturing is achieved by first vertically poling the PVDF-TrFE film and then laterally poling the dielectric layer close to the gate electrode. TIPS-pentacene FETs show on/off ratios of 10 5 and hole mobilities of 1 cm 2 Vs −1 under ambient conditions with operating voltages well below −5 V. The electric field distribution in the dielectric layer is simulated by using finite difference time domain methods.
Original language | English |
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Article number | 1801787 |
Journal | Advanced Materials Interfaces |
Volume | 6 |
Issue number | 4 |
DOIs | |
State | Published - Feb 22 2019 |
Bibliographical note
Publisher Copyright:© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords
- ferroelectric dielectric
- field-effect transistors
- organic semiconductor
- poling
- transport
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering