Textured Poling of the Ferroelectric Dielectric Layer for Improved Organic Field-Effect Transistors

Amrit Laudari, Alec Pickett, Fatemeh Shahedipour-Sandvik, Kasey Hogan, John E. Anthony, Xiaoqing He, Suchismita Guha

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Polymer ferroelectrics are playing an increasingly active role in flexible memory application and wearable electronics. The relaxor ferroelectric dielectric, poly(vinylidene fluoride trifluorethylene (PVDF-TrFE), although vastly used in organic field-effect transistors (FETs), has issues with gate leakage current especially when the film thickness is below 500 nm. This work demonstrates a novel method of selective poling the dielectric layer. By using solution-processed 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) as the organic semiconductor, it is shown that textured poling of the PVDF-TrFE layer dramatically improves FET properties compared to unpoled or uniformly poled ferroelectric films. The texturing is achieved by first vertically poling the PVDF-TrFE film and then laterally poling the dielectric layer close to the gate electrode. TIPS-pentacene FETs show on/off ratios of 10 5 and hole mobilities of 1 cm 2 Vs −1 under ambient conditions with operating voltages well below −5 V. The electric field distribution in the dielectric layer is simulated by using finite difference time domain methods.

Original languageEnglish
Article number1801787
JournalAdvanced Materials Interfaces
Volume6
Issue number4
DOIs
StatePublished - Feb 22 2019

Bibliographical note

Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

  • ferroelectric dielectric
  • field-effect transistors
  • organic semiconductor
  • poling
  • transport

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering

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