Abstract
Spin injection is a powerful experimental probe into a wealth of nonequilibrium spin-dependent phenomena displayed by materials with sizable spin-orbit interactions. Here, we present a theory of coupled spin-charge diffusive transport in spin-valve devices built from two-dimensional materials. The formalism takes into account realistic spin-orbit effects with both spatially uniform and random components in van der Waals materials arising from the interfacial breaking of inversion symmetry. The various charge-to-spin conversion mechanisms known to be present in diffusive metals, including the spin Hall effect and several mechanisms contributing to current-induced spin polarization are accounted for. Our analysis shows that the dominant conversion mechanisms can be discerned by analyzing the nonlocal resistance of the spin valve for different polarizations of the injected spins and as a function of the applied in-plane magnetic field.
| Original language | English |
|---|---|
| Article number | 245424 |
| Journal | Physical Review B |
| Volume | 10 |
| Issue number | 24 |
| DOIs | |
| State | Published - Dec 19 2019 |
Bibliographical note
Funding Information:M.A.C. and Y.H.L. have been supported by the Ministry of Science and Technology (Taiwan) under contract number NSC 102- 2112-M-007-024-MY5. M.A.C. also acknowledges the support of the National Center for Theoretical Sciences of Taiwan. A.F. gratefully acknowledges the financial support from the Royal Society, London through a Royal Society University Research Fellowship. M.O. and A.F. acknowledge funding from EPSRC (Grant Ref: EP/N004817/1). APPENDIX A:
Publisher Copyright:
© 2019 American Physical Society.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics