Thermal stability of Si3N4/Si/GaAs interfaces

D. G. Park, Z. Chen, D. M. Diatezua, Z. Wang, A. Rockett, H. Morkoç, S. A. Alterovitz

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


An investigation on the thermally induced interface degradation of Si3N4/Si/p-GaAs metal-insulator-semiconductor (MIS) structures is presented. We characterize the mutation of chemical identities by in situ angle-resolved x-ray photoelectron spectroscopy and the nature of an insulator and interface by a variable angle spectroscopic ellipsometry after high temperature annealing. The minimum interface state density of the Si3N4/Si/p-GaAs MIS capacitor as determined by capacitance-voltage and conductance loss measurements was about 8 X 1010 eV-1 cm-2 near GaAs midgap after rapid thermal annealing at 550°C in N2. However, this density increased to 5 X 1011 eV-1 cm-2 after annealing at 750°C in N2. The underlying mechanisms responsible for this degradation are described.

Original languageEnglish
Pages (from-to)1263-1265
Number of pages3
JournalApplied Physics Letters
Issue number10
StatePublished - Mar 10 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Thermal stability of Si3N4/Si/GaAs interfaces'. Together they form a unique fingerprint.

Cite this