Thermal stability of Si3N4/Si/GaAs interfaces

D. G. Park; Z. Chen; D. M. Diatezua; Z. Wang; A. Rockett; H. Morkoç; S. A. Alterovitz

doi:10.1063/1.118547

Thermal stability of Si₃N₄/Si/GaAs interfaces

D. G. Park, Z. Chen, D. M. Diatezua, Z. Wang, A. Rockett, H. Morkoç, S. A. Alterovitz

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13 Scopus citations

Abstract

An investigation on the thermally induced interface degradation of Si₃N₄/Si/p-GaAs metal-insulator-semiconductor (MIS) structures is presented. We characterize the mutation of chemical identities by in situ angle-resolved x-ray photoelectron spectroscopy and the nature of an insulator and interface by a variable angle spectroscopic ellipsometry after high temperature annealing. The minimum interface state density of the Si₃N₄/Si/p-GaAs MIS capacitor as determined by capacitance-voltage and conductance loss measurements was about 8 X 10¹⁰ eV^-1 cm^-2 near GaAs midgap after rapid thermal annealing at 550°C in N₂. However, this density increased to 5 X 10¹¹ eV^-1 cm^-2 after annealing at 750°C in N₂. The underlying mechanisms responsible for this degradation are described.

Original language	English
Pages (from-to)	1263-1265
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	10
DOIs	https://doi.org/10.1063/1.118547
State	Published - Mar 10 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Thermal stability of Si3N4/Si/GaAs interfaces",

abstract = "An investigation on the thermally induced interface degradation of Si3N4/Si/p-GaAs metal-insulator-semiconductor (MIS) structures is presented. We characterize the mutation of chemical identities by in situ angle-resolved x-ray photoelectron spectroscopy and the nature of an insulator and interface by a variable angle spectroscopic ellipsometry after high temperature annealing. The minimum interface state density of the Si3N4/Si/p-GaAs MIS capacitor as determined by capacitance-voltage and conductance loss measurements was about 8 X 1010 eV-1 cm-2 near GaAs midgap after rapid thermal annealing at 550°C in N2. However, this density increased to 5 X 1011 eV-1 cm-2 after annealing at 750°C in N2. The underlying mechanisms responsible for this degradation are described.",

author = "Park, {D. G.} and Z. Chen and Diatezua, {D. M.} and Z. Wang and A. Rockett and H. Morko{\c c} and Alterovitz, {S. A.}",

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T1 - Thermal stability of Si3N4/Si/GaAs interfaces

AU - Park, D. G.

AU - Chen, Z.

AU - Diatezua, D. M.

AU - Wang, Z.

AU - Rockett, A.

AU - Morkoç, H.

AU - Alterovitz, S. A.

PY - 1997/3/10

Y1 - 1997/3/10

N2 - An investigation on the thermally induced interface degradation of Si3N4/Si/p-GaAs metal-insulator-semiconductor (MIS) structures is presented. We characterize the mutation of chemical identities by in situ angle-resolved x-ray photoelectron spectroscopy and the nature of an insulator and interface by a variable angle spectroscopic ellipsometry after high temperature annealing. The minimum interface state density of the Si3N4/Si/p-GaAs MIS capacitor as determined by capacitance-voltage and conductance loss measurements was about 8 X 1010 eV-1 cm-2 near GaAs midgap after rapid thermal annealing at 550°C in N2. However, this density increased to 5 X 1011 eV-1 cm-2 after annealing at 750°C in N2. The underlying mechanisms responsible for this degradation are described.

AB - An investigation on the thermally induced interface degradation of Si3N4/Si/p-GaAs metal-insulator-semiconductor (MIS) structures is presented. We characterize the mutation of chemical identities by in situ angle-resolved x-ray photoelectron spectroscopy and the nature of an insulator and interface by a variable angle spectroscopic ellipsometry after high temperature annealing. The minimum interface state density of the Si3N4/Si/p-GaAs MIS capacitor as determined by capacitance-voltage and conductance loss measurements was about 8 X 1010 eV-1 cm-2 near GaAs midgap after rapid thermal annealing at 550°C in N2. However, this density increased to 5 X 1011 eV-1 cm-2 after annealing at 750°C in N2. The underlying mechanisms responsible for this degradation are described.

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Thermal stability of Si₃N₄/Si/GaAs interfaces

Abstract

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