Three-Level Two-Stage Decoupled Active NPC Converter with Si IGBT and SiC MOSFET

Di Zhang; Jiangbiao He; Sachin Madhusoodhanan

doi:10.1109/TIA.2018.2851561

Three-Level Two-Stage Decoupled Active NPC Converter with Si IGBT and SiC MOSFET

Di Zhang, Jiangbiao He, Sachin Madhusoodhanan

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

This paper presents the operation principle and benefits of a novel power converter topology named three-level two-stage decoupled active neutral point clamped (3L-TDANPC) converter, which is implemented based on a hybrid utilization of silicon (Si) insulated gate bipolar transistors (IGBTs) and silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (mosfets). The 3L-TDANPC converter can achieve high efficiency with limited number of SiC mosfet modules while keeping balanced loss distribution among the switching devices, which helps increase the converter power ratings. In addition, in this 3L-TDANPC converter, the SiC mosfet has a potential to ride through short-circuit fault because of the presence of Si IGBTs. The key challenges that are associated with system resonant current are investigated and the methods to damp such resonant current are proposed and explained in detail. The simulation and experimental results based on a 1-MW 3L-TDANPC converter prototype confirm the expected benefits of this proposed converter and the effectiveness of the proposed resonant current damping methods.

Original language	English
Article number	8400394
Pages (from-to)	6169-6178
Number of pages	10
Journal	IEEE Transactions on Industry Applications
Volume	54
Issue number	6
DOIs	https://doi.org/10.1109/TIA.2018.2851561
State	Published - Nov 1 2018

Bibliographical note

Funding Information:
Manuscript received December 26, 2017; revised May 6, 2018; accepted June 19, 2018. Date of publication June 28, 2018; date of current version October 12, 2018. Paper 2017-IPCC-1383.R1, presented at the 2017 IEEE Energy Conversion Congress and Exposition, Cincinnati, OH, USA, Oct. 1–5, and approved for publication in the IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS by the Industrial Power Converter Committee of the IEEE Industry Applications Society. This work was supported by the U.S. National Aeronautics and Space Administration (NASA) AATT Grant NNC15CA29C. (Corresponding author: Jiangbiao He.) The authors are with the GE Global Research Center, Niskayuna, NY 12309 USA (e-mail:,zhangd@ge.com; jiangbiao@ieee.org; sachin@ncsu.edu).

Publisher Copyright:
© 1972-2012 IEEE.

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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title = "Three-Level Two-Stage Decoupled Active NPC Converter with Si IGBT and SiC MOSFET",

abstract = "This paper presents the operation principle and benefits of a novel power converter topology named three-level two-stage decoupled active neutral point clamped (3L-TDANPC) converter, which is implemented based on a hybrid utilization of silicon (Si) insulated gate bipolar transistors (IGBTs) and silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (mosfets). The 3L-TDANPC converter can achieve high efficiency with limited number of SiC mosfet modules while keeping balanced loss distribution among the switching devices, which helps increase the converter power ratings. In addition, in this 3L-TDANPC converter, the SiC mosfet has a potential to ride through short-circuit fault because of the presence of Si IGBTs. The key challenges that are associated with system resonant current are investigated and the methods to damp such resonant current are proposed and explained in detail. The simulation and experimental results based on a 1-MW 3L-TDANPC converter prototype confirm the expected benefits of this proposed converter and the effectiveness of the proposed resonant current damping methods.",

author = "Di Zhang and Jiangbiao He and Sachin Madhusoodhanan",

note = "Funding Information: Manuscript received December 26, 2017; revised May 6, 2018; accepted June 19, 2018. Date of publication June 28, 2018; date of current version October 12, 2018. Paper 2017-IPCC-1383.R1, presented at the 2017 IEEE Energy Conversion Congress and Exposition, Cincinnati, OH, USA, Oct. 1–5, and approved for publication in the IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS by the Industrial Power Converter Committee of the IEEE Industry Applications Society. This work was supported by the U.S. National Aeronautics and Space Administration (NASA) AATT Grant NNC15CA29C. (Corresponding author: Jiangbiao He.) The authors are with the GE Global Research Center, Niskayuna, NY 12309 USA (e-mail:,zhangd@ge.com; jiangbiao@ieee.org; sachin@ncsu.edu). Publisher Copyright: {\textcopyright} 1972-2012 IEEE.",

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N2 - This paper presents the operation principle and benefits of a novel power converter topology named three-level two-stage decoupled active neutral point clamped (3L-TDANPC) converter, which is implemented based on a hybrid utilization of silicon (Si) insulated gate bipolar transistors (IGBTs) and silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (mosfets). The 3L-TDANPC converter can achieve high efficiency with limited number of SiC mosfet modules while keeping balanced loss distribution among the switching devices, which helps increase the converter power ratings. In addition, in this 3L-TDANPC converter, the SiC mosfet has a potential to ride through short-circuit fault because of the presence of Si IGBTs. The key challenges that are associated with system resonant current are investigated and the methods to damp such resonant current are proposed and explained in detail. The simulation and experimental results based on a 1-MW 3L-TDANPC converter prototype confirm the expected benefits of this proposed converter and the effectiveness of the proposed resonant current damping methods.

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Three-Level Two-Stage Decoupled Active NPC Converter with Si IGBT and SiC MOSFET

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