Three-level two-stage decoupled active NPC converter with Si IGBT and SiC MOSFET

Di Zhang; Jiangbiao He; Sachin Madhusoodhanan

doi:10.1109/ECCE.2017.8096943

Three-level two-stage decoupled active NPC converter with Si IGBT and SiC MOSFET

Di Zhang
, Jiangbiao He
, Sachin Madhusoodhanan

Power and Energy Institute of Kentucky (PEIK)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

20 Scopus citations

Abstract

This paper presents the operation principle and benefits of a novel power converter topology named three-level two-stage decoupled Active Neutral Point Clamped Converter (3L-TDANPC), which is implemented based on a hybrid utilization of Si IGBTs and SiC MOSFETs. The 3L-TDANPC converter can achieve high efficiency with limited number of SiC MOSFET modules while keeping balanced distribution among the switching devices, which helps manage the converter power ratings. In addition, in this 3L-TDANPC converter, the SiC MOSFET has a potential to ride through short circuit fault because of Si IGBT. The key challenges that are associated with system resonant current is investigated and the methods to damp such current are proposed and explained in detail. The simulation and double pulse test results based on a 1-MW 3LTDANPC converter prototype confirm the expected benefits of this proposed converter and the effectiveness of the proposed resonant current damping methods.

Original language	English
Title of host publication	2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
Pages	5671-5678
Number of pages	8
ISBN (Electronic)	9781509029983
DOIs	https://doi.org/10.1109/ECCE.2017.8096943
State	Published - Nov 3 2017
Event	9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017 - Cincinnati, United States Duration: Oct 1 2017 → Oct 5 2017

Publication series

Name	2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
Volume	2017-January

Conference

Conference	9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017
Country/Territory	United States
City	Cincinnati
Period	10/1/17 → 10/5/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Multilevel converter
Resonance current damping
SiC MOSFET
Thermal balance

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering
Renewable Energy, Sustainability and the Environment
Control and Optimization

Access to Document

10.1109/ECCE.2017.8096943

Cite this

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title = "Three-level two-stage decoupled active NPC converter with Si IGBT and SiC MOSFET",

abstract = "This paper presents the operation principle and benefits of a novel power converter topology named three-level two-stage decoupled Active Neutral Point Clamped Converter (3L-TDANPC), which is implemented based on a hybrid utilization of Si IGBTs and SiC MOSFETs. The 3L-TDANPC converter can achieve high efficiency with limited number of SiC MOSFET modules while keeping balanced distribution among the switching devices, which helps manage the converter power ratings. In addition, in this 3L-TDANPC converter, the SiC MOSFET has a potential to ride through short circuit fault because of Si IGBT. The key challenges that are associated with system resonant current is investigated and the methods to damp such current are proposed and explained in detail. The simulation and double pulse test results based on a 1-MW 3LTDANPC converter prototype confirm the expected benefits of this proposed converter and the effectiveness of the proposed resonant current damping methods.",

keywords = "Multilevel converter, Resonance current damping, SiC MOSFET, Thermal balance",

author = "Di Zhang and Jiangbiao He and Sachin Madhusoodhanan",

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doi = "10.1109/ECCE.2017.8096943",

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Zhang, D, He, J & Madhusoodhanan, S 2017, Three-level two-stage decoupled active NPC converter with Si IGBT and SiC MOSFET. in 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017., 8096943, 2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017, vol. 2017-January, pp. 5671-5678, 9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017, Cincinnati, United States, 10/1/17. https://doi.org/10.1109/ECCE.2017.8096943

Three-level two-stage decoupled active NPC converter with Si IGBT and SiC MOSFET. / Zhang, Di; He, Jiangbiao; Madhusoodhanan, Sachin.
2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017. 2017. p. 5671-5678 8096943 (2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Madhusoodhanan, Sachin

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N2 - This paper presents the operation principle and benefits of a novel power converter topology named three-level two-stage decoupled Active Neutral Point Clamped Converter (3L-TDANPC), which is implemented based on a hybrid utilization of Si IGBTs and SiC MOSFETs. The 3L-TDANPC converter can achieve high efficiency with limited number of SiC MOSFET modules while keeping balanced distribution among the switching devices, which helps manage the converter power ratings. In addition, in this 3L-TDANPC converter, the SiC MOSFET has a potential to ride through short circuit fault because of Si IGBT. The key challenges that are associated with system resonant current is investigated and the methods to damp such current are proposed and explained in detail. The simulation and double pulse test results based on a 1-MW 3LTDANPC converter prototype confirm the expected benefits of this proposed converter and the effectiveness of the proposed resonant current damping methods.

AB - This paper presents the operation principle and benefits of a novel power converter topology named three-level two-stage decoupled Active Neutral Point Clamped Converter (3L-TDANPC), which is implemented based on a hybrid utilization of Si IGBTs and SiC MOSFETs. The 3L-TDANPC converter can achieve high efficiency with limited number of SiC MOSFET modules while keeping balanced distribution among the switching devices, which helps manage the converter power ratings. In addition, in this 3L-TDANPC converter, the SiC MOSFET has a potential to ride through short circuit fault because of Si IGBT. The key challenges that are associated with system resonant current is investigated and the methods to damp such current are proposed and explained in detail. The simulation and double pulse test results based on a 1-MW 3LTDANPC converter prototype confirm the expected benefits of this proposed converter and the effectiveness of the proposed resonant current damping methods.

KW - Multilevel converter

KW - Resonance current damping

KW - SiC MOSFET

KW - Thermal balance

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Three-level two-stage decoupled active NPC converter with Si IGBT and SiC MOSFET

Abstract

Publication series

Conference

Bibliographical note

UN SDGs

Keywords

ASJC Scopus subject areas

Access to Document

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Cite this