Torque and temperature dependence of the hysteretic voltage-induced torsional strain in tantalum trisulfide

H. Zhang, J. Nichols, J. W. Brill

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We have measured the dependence of the hysteretic voltage-induced torsional strain (VITS) in crystals of orthorhombic tantalum trisulfide on temperature and applied torque. In particular, applying square-wave voltages above the charge density wave (CDW) threshold, so as to abruptly switch the strain across its hysteresis loop, we have found that the time constant for the VITS to switch (at different temperatures and voltages) varied as the CDW current. Application of torque to the crystal could also change the VITS time constant, magnitude, and sign, suggesting that, at least in part, the VITS is a consequence of residual torsional strain in the sample which twists the CDW. Application of voltage changes the pitch of these CDW twists, which then act back on the lattice. However, it remains difficult to understand the sluggishness of the response.

Original languageEnglish
Article number125134
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number12
DOIs
StatePublished - Sep 28 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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