Tuning electronic structure via epitaxial strain in Sr2IrO 4 thin films

J. Nichols, J. Terzic, E. G. Bittle, O. B. Korneta, L. E. De Long, J. W. Brill, G. Cao, S. S.A. Seo

Research output: Contribution to journalArticlepeer-review

85 Scopus citations


We have synthesized epitaxial Sr2IrO4 thin-films on various substrates and studied their electronic structure as a function of lattice-strain. Under tensile (compressive) strain, increased (decreased) Ir-O-Ir bond-angle is expected to result in increased (decreased) electronic bandwidth. However, we have observed that the two optical absorption peaks near 0.5 eV and 1.0 eV are shifted to higher (lower) energies under tensile (compressive) strain, indicating that the electronic-correlation energy is also affected by in-plane lattice-strain. The effective tuning of electronic structure under lattice-modification provides an important insight into the physics driven by the coexisting strong spin-orbit coupling and electronic correlation.

Original languageEnglish
Article number141908
JournalApplied Physics Letters
Issue number14
StatePublished - Apr 8 2013

Bibliographical note

Funding Information:
We thank B. I. Min, H.-Y. Kee, G. Jackeli, S. J. Moon, D. Haskel, and B. J. Kim for insightful discussions. This research was supported by the NSF through Grant No. EPS-0814194 (the Center for Advanced Materials), Grant Nos. DMR-0800367, DMR-0856234, by U.S. DoE through Grant No. DE-FG02-97ER45653, and by the Kentucky Science and Engineering Foundation with the Kentucky Science and Technology Corporation through Grant Agreement No. KSEF-148-502-12-303.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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