Tunneling into the Mott insulator Sr 2 IrO 4

John Nichols; Noah Bray-Ali; Armin Ansary; Gang Cao; Kwok Wai Ng

doi:10.1103/PhysRevB.89.085125

Tunneling into the Mott insulator Sr 2 IrO 4

John Nichols, Noah Bray-Ali, Armin Ansary, Gang Cao, Kwok Wai Ng

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We studied the single-layered iridate Sr2IrO4 with a scanning tunneling microscope. The finite low temperature conductance enables the electronic structure of this antiferromagnetic Mott insulator to be measured by tunneling spectroscopy. We imaged the topography of freshly cleaved surfaces and measured differential tunneling conductance at cryogenic temperatures. We found the Mott gap in the tunneling density of states to be 2Δ=615 meV. Within the Mott gap, additional shoulders are observed which are interpreted as inelastic loss features due to magnons.

Original language	English
Article number	085125
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	89
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.89.085125
State	Published - Feb 24 2014

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.89.085125

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title = "Tunneling into the Mott insulator Sr 2 IrO 4",

abstract = "We studied the single-layered iridate Sr2IrO4 with a scanning tunneling microscope. The finite low temperature conductance enables the electronic structure of this antiferromagnetic Mott insulator to be measured by tunneling spectroscopy. We imaged the topography of freshly cleaved surfaces and measured differential tunneling conductance at cryogenic temperatures. We found the Mott gap in the tunneling density of states to be 2Δ=615 meV. Within the Mott gap, additional shoulders are observed which are interpreted as inelastic loss features due to magnons.",

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AU - Bray-Ali, Noah

AU - Ansary, Armin

AU - Cao, Gang

AU - Ng, Kwok Wai

PY - 2014/2/24

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AB - We studied the single-layered iridate Sr2IrO4 with a scanning tunneling microscope. The finite low temperature conductance enables the electronic structure of this antiferromagnetic Mott insulator to be measured by tunneling spectroscopy. We imaged the topography of freshly cleaved surfaces and measured differential tunneling conductance at cryogenic temperatures. We found the Mott gap in the tunneling density of states to be 2Δ=615 meV. Within the Mott gap, additional shoulders are observed which are interpreted as inelastic loss features due to magnons.

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Tunneling into the Mott insulator Sr 2 IrO 4

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