Tunneling into the Mott insulator Sr 2 IrO 4

John Nichols, Noah Bray-Ali, Armin Ansary, Gang Cao, Kwok Wai Ng

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


We studied the single-layered iridate Sr2IrO4 with a scanning tunneling microscope. The finite low temperature conductance enables the electronic structure of this antiferromagnetic Mott insulator to be measured by tunneling spectroscopy. We imaged the topography of freshly cleaved surfaces and measured differential tunneling conductance at cryogenic temperatures. We found the Mott gap in the tunneling density of states to be 2Δ=615 meV. Within the Mott gap, additional shoulders are observed which are interpreted as inelastic loss features due to magnons.

Original languageEnglish
Article number085125
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number8
StatePublished - Feb 24 2014

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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