Two-dimensional spatial-phase-locked electron-beam lithography via sparse sampling

J. T. Hastings, Feng Zhang, M. A. Finlayson, J. G. Goodberlet, Henry I. Smith

Research output: Contribution to journalConference articlepeer-review

20 Scopus citations


Spatial-phase-locked electron-beam lithography (SPLEBL) developed to improve the pattern-placement accuracy of scanning-electron-beam lithography (SEBL) tools is presented.This mode of SPLEBL provides two dimensional sub-beam-step pattern placement, enen with the extremely poor signal-to-noise ratio (SNR). It is expected that the improvements to scintillator and light collection system will increase SNR and pattern-placement accuracy.

Original languageEnglish
Pages (from-to)3268-3271
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
StatePublished - Nov 2000
Event44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA
Duration: May 30 2000Jun 2 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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