Two-dimensional spatial-phase-locked electron-beam lithography via sparse sampling

J. T. Hastings; Feng Zhang; M. A. Finlayson; J. G. Goodberlet; Henry I. Smith

doi:10.1116/1.1314371

Two-dimensional spatial-phase-locked electron-beam lithography via sparse sampling

J. T. Hastings, Feng Zhang, M. A. Finlayson, J. G. Goodberlet, Henry I. Smith

Research output: Contribution to journal › Conference article › peer-review

20 Scopus citations

Abstract

Spatial-phase-locked electron-beam lithography (SPLEBL) developed to improve the pattern-placement accuracy of scanning-electron-beam lithography (SEBL) tools is presented.This mode of SPLEBL provides two dimensional sub-beam-step pattern placement, enen with the extremely poor signal-to-noise ratio (SNR). It is expected that the improvements to scintillator and light collection system will increase SNR and pattern-placement accuracy.

Original language	English
Pages (from-to)	3268-3271
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	6
DOIs	https://doi.org/10.1116/1.1314371
State	Published - Nov 2000
Event	44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA Duration: May 30 2000 → Jun 2 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1314371

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abstract = "Spatial-phase-locked electron-beam lithography (SPLEBL) developed to improve the pattern-placement accuracy of scanning-electron-beam lithography (SEBL) tools is presented.This mode of SPLEBL provides two dimensional sub-beam-step pattern placement, enen with the extremely poor signal-to-noise ratio (SNR). It is expected that the improvements to scintillator and light collection system will increase SNR and pattern-placement accuracy.",

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year = "2000",

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AU - Hastings, J. T.

AU - Zhang, Feng

AU - Finlayson, M. A.

AU - Goodberlet, J. G.

AU - Smith, Henry I.

PY - 2000/11

Y1 - 2000/11

N2 - Spatial-phase-locked electron-beam lithography (SPLEBL) developed to improve the pattern-placement accuracy of scanning-electron-beam lithography (SEBL) tools is presented.This mode of SPLEBL provides two dimensional sub-beam-step pattern placement, enen with the extremely poor signal-to-noise ratio (SNR). It is expected that the improvements to scintillator and light collection system will increase SNR and pattern-placement accuracy.

AB - Spatial-phase-locked electron-beam lithography (SPLEBL) developed to improve the pattern-placement accuracy of scanning-electron-beam lithography (SEBL) tools is presented.This mode of SPLEBL provides two dimensional sub-beam-step pattern placement, enen with the extremely poor signal-to-noise ratio (SNR). It is expected that the improvements to scintillator and light collection system will increase SNR and pattern-placement accuracy.

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DO - 10.1116/1.1314371

M3 - Conference article

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

T2 - 44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication

Y2 - 30 May 2000 through 2 June 2000

ER -

Two-dimensional spatial-phase-locked electron-beam lithography via sparse sampling

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