Ultrathin SiO₂ films grown by atomic layer deposition using tris(dimethylamino)silane (TDMAS) and ozone

Atomic layer deposition of SiO₂ using tris(dimethylamino)silane and ozone were studied comprehensively. It was found that SiO₂ grew linearly at different temperatures while the growth rate increased at higher temperatures. For thickness <3.5 nm, the direct tunneling current of the ALD SiO₂ is comparable to that of thermally grown SiO₂ when considering its equivalent oxide thickness (EOT). ALD could grow high-quality conformal SiO₂ films on non-silicon substrates and on high aspect-ratio pores and nanostructures. The ALD SiO₂ can be used as high-quality gate insulators for thin-film MOS transistors, and insulators for sensor structures and nanostructures on non-silicon substrates.