Unconventional anomalous Hall effect from antiferromagnetic domain walls of N d2 i r2 O7 thin films

Woo Jin Kim, John H. Gruenewald, Taekoo Oh, Sangmo Cheon, Bongju Kim, Oleksandr B. Korneta, Hwanbeom Cho, Daesu Lee, Yoonkoo Kim, Miyoung Kim, Je Geun Park, Bohm Jung Yang, Ambrose Seo, Tae Won Noh

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25 Scopus citations


Ferroic domain walls (DWs) create different symmetries and ordered states compared with those in single-domain bulk materials. In particular, the DWs of an antiferromagnet with noncoplanar spin structure have a distinct symmetry that cannot be realized in those of their ferromagnet counterparts. In this paper, we show that an unconventional anomalous Hall effect (AHE) can arise from the DWs of a noncoplanar antiferromagnet, Nd2Ir2O7. Bulk Nd2Ir2O7 has a cubic symmetry; thus, its Hall signal should be zero without an applied magnetic field. The DWs generated in this material break the twofold rotational symmetry, which allows for finite anomalous Hall conductivity. A strong f-d exchange interaction between the Nd and Ir magnetic moments significantly influences antiferromagnetic (AFM) domain switching. Our epitaxial Nd2Ir2O7 thin film showed a large enhancement of the AHE signal when the AFM domains switched, indicating that the AHE is mainly due to DWs. Our paper highlights the symmetry-broken interface of AFM materials as a means of exploring topological effects and their relevant applications.

Original languageEnglish
Article number125103
JournalPhysical Review B
Issue number12
StatePublished - Sep 4 2018

Bibliographical note

Publisher Copyright:
© 2018 American Physical Society.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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