Abstract
Organic dosimeters offer unique advantages over traditional technologies, and they can be used to expand the capabilities of current radiation detection systems. In-depth knowledge of the mechanisms underlying the interaction between radiation and organic materials is essential for their widespread adoption. Here, we identified and quantitatively characterized the electronic traps generated during the operation of radiation dosimeters based on organic field-effect transistors. Spectral analysis of the trap density of states, along with optical and structural studies, revealed the origin of trap states as local structural disorder within the crystalline films. Our results provide new insights into the radiation-induced defects in organic dosimeters, and pave the way for the development of more efficient and reliable radiation detection devices.
| Original language | English |
|---|---|
| Pages (from-to) | 134-140 |
| Number of pages | 7 |
| Journal | Materials Horizons |
| Volume | 11 |
| Issue number | 1 |
| DOIs | |
| State | Published - Oct 27 2023 |
Bibliographical note
Publisher Copyright:© 2024 The Royal Society of Chemistry.
Funding
The work at Wake Forest University was supported by the National Science foundation through grant DMR-1627925, and at the University of Kentucky through grant DMR-1627428.
| Funders | Funder number |
|---|---|
| National Science Foundation Arctic Social Science Program | DMR-1627925 |
| University of Kentucky | DMR-1627428 |
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Process Chemistry and Technology
- Electrical and Electronic Engineering