Abstract
In order to understand how additives influence the structure and electrical properties of active layers in thin-film devices, a compositionally identical but structurally different guest–host system based on the syn and anti isomers of triethylsilylethynyl anthradithiophene (TES ADT) is systematically explored. The mobility of organic thin-film transistors (OTFTs) comprising anti TES ADT drops with the addition of only 0.01% of the syn isomer and is pinned at the mobility of OTFTs having pure syn isomer after the addition of only 10% of the isomer. As the syn isomer fraction increases, intermolecular repulsion increases, resulting in a decrease in the unit-cell density and concomitant disordering of the charge-transport pathway. This molecular disorder leads to an increase in charge trapping, causing the mobility of OTFTs to drop with increasing syn-isomer concentration. Since charge transport is sensitive to even minute fractions of molecular disorder, this work emphasizes the importance of prioritizing structural compatibility when choosing material pairs for guest–host systems.
| Original language | English |
|---|---|
| Article number | 1700048 |
| Journal | Advanced Materials |
| Volume | 29 |
| Issue number | 23 |
| DOIs | |
| State | Published - Jun 20 2017 |
Bibliographical note
Publisher Copyright:© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Funding
Y.-L.L. acknowledges the National Science Foundation (NSF) MRSEC program through the Princeton Center for Complex Materials (DMR-1420541) and the Designing Materials to Revolutionize and Engineer our Future (DMREF) program through DMR-1627453. J.E.A. acknowledges the DMREF program through DMR-1627428. Part of this research was conducted at the Cornell High Energy Synchrotron Source, which was supported by the NSF and the National Institutes of Health/National Institute of General Medical Sciences (DMR-1332208). A.K.H. was supported by a NSF Graduate Research Fellowship.
| Funders | Funder number |
|---|---|
| National Science Foundation (NSF) | 1627428 |
| National Institutes of Health (NIH) | |
| National Institute of General Medical Sciences | DMR-1332208 |
| Princeton Center for Complex Materials | DMR-1627428, DMR-1420541, DMR-1627453 |
Keywords
- disorder
- guest–host systems
- isomers
- organic semiconductors
- organic thin-film transistors
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering