Valley Hall effect and nonlocal transport in strained graphene

Xian Peng Zhang, Chunli Huang, Miguel A. Cazalilla

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


Graphene subject to high levels of shear strain leads to strong pseudo-magnetic fields resulting in the emergence of pseudo-Landau levels. Here we show that, with modest levels of strain, graphene can also sustain a classical valley Hall effect (VHE) that can be detected in nonlocal transport measurements. We provide a theory of the strain-induced VHE starting from the quantum Boltzmann equation. This allows us to show that, averaging over short-range impurity configurations destroys quantum coherence between valleys, leaving the elastic scattering time and inter-valley scattering rate as the only parameters characterizing the transport theory. Using the theory, we compute the nonlocal resistance of a Hall bar device in the diffusive regime. Our theory is also relevant for the study of moderate strain effects in the (nonlocal) transport properties of other two-dimensional materials and van der Walls heterostructures.

Original languageEnglish
Article number024007
Journal2D Materials
Issue number2
StatePublished - Jun 2017

Bibliographical note

Publisher Copyright:
© 2017 IOP Publishing Ltd.


  • Alley Hall effect
  • Hall effects
  • Kinetic equations
  • Straintronics
  • Transport theory

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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