Weyl Semimetal Path to Valley Filtering in Graphene

Ahmed M. Khalifa; Ribhu K. Kaul; Efrat Shimshoni; H. A. Fertig; Ganpathy Murthy

doi:10.1103/PhysRevLett.127.126801

Weyl Semimetal Path to Valley Filtering in Graphene

Ahmed M. Khalifa, Ribhu K. Kaul, Efrat Shimshoni, H. A. Fertig, Ganpathy Murthy

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6 Scopus citations

Abstract

We propose a device in which a sheet of graphene is coupled to a Weyl semimetal, allowing for the physical access to the study of tunneling from two- to three-dimensional massless Dirac fermions. Because of the reconstructed band structure, we find that this device acts as a robust valley filter for electrons in the graphene sheet. We show that, by appropriate alignment, the Weyl semimetal draws away current in one of the two graphene valleys, while allowing current in the other to pass unimpeded. In contrast to other proposed valley filters, the mechanism of our proposed device occurs in the bulk of the graphene sheet, obviating the need for carefully shaped edges or dimensions.

Original language	English
Article number	126801
Journal	Physical Review Letters
Volume	127
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevLett.127.126801
State	Published - Sep 17 2021

Bibliographical note

Publisher Copyright:
© 2021 American Physical Society.

Funding

We acknowledge support from the National Science Foundation via Grants No. DMR-2026947 (A.\u2009M.\u2009K. and R.\u2009K.\u2009K.), No. ECCS-1936406, and No. DMR-1914451 (H.\u2009A.\u2009F.), as well as the support of the Research Corporation for Science Advancement through a Cottrell SEED Grant (H.\u2009A.\u2009F.), the U.S.-Israel Binational Science Foundation through Grants No. 2016130 (H.\u2009A.\u2009F., G.\u2009M., and E.\u2009S.) and No. 2018726 (H.\u2009A.\u2009F. and E.\u2009S.), and the Israel Science Foundation (ISF) Grant No. 993/19 (E.\u2009S.). E.\u2009S., H.\u2009A.\u2009F., R.\u2009K.\u2009K., and G.\u2009M. wish to thank the Aspen Center for Physics (NSF Grant no. PHY-1607611) for its hospitality while this work was being finished.

Funders	Funder number
Aspen Center for Physics
Research Corporation for Science Advancement
US-Israel Binational Science Foundation	993/19
U.S. Department of Energy Chinese Academy of Sciences Guangzhou Municipal Science and Technology Project Oak Ridge National Laboratory Extreme Science and Engineering Discovery Environment National Science Foundation National Energy Research Scientific Computing Center National Natural Science Foundation of China	2026947, 1936406, DMR-1914451, DMR-2026947, ECCS-1936406, PHY-1607611
United States-Israel Binational Science Foundation	2016130, 2018726

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.127.126801

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title = "Weyl Semimetal Path to Valley Filtering in Graphene",

abstract = "We propose a device in which a sheet of graphene is coupled to a Weyl semimetal, allowing for the physical access to the study of tunneling from two- to three-dimensional massless Dirac fermions. Because of the reconstructed band structure, we find that this device acts as a robust valley filter for electrons in the graphene sheet. We show that, by appropriate alignment, the Weyl semimetal draws away current in one of the two graphene valleys, while allowing current in the other to pass unimpeded. In contrast to other proposed valley filters, the mechanism of our proposed device occurs in the bulk of the graphene sheet, obviating the need for carefully shaped edges or dimensions.",

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AU - Murthy, Ganpathy

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AB - We propose a device in which a sheet of graphene is coupled to a Weyl semimetal, allowing for the physical access to the study of tunneling from two- to three-dimensional massless Dirac fermions. Because of the reconstructed band structure, we find that this device acts as a robust valley filter for electrons in the graphene sheet. We show that, by appropriate alignment, the Weyl semimetal draws away current in one of the two graphene valleys, while allowing current in the other to pass unimpeded. In contrast to other proposed valley filters, the mechanism of our proposed device occurs in the bulk of the graphene sheet, obviating the need for carefully shaped edges or dimensions.

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Weyl Semimetal Path to Valley Filtering in Graphene

Abstract

Bibliographical note

Funding

ASJC Scopus subject areas

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