6.2: Optimizing osmium-ruthenium films to inhibit tungsten interdiffusion

Phillip D. Swartzentruber, Wen Chung Li, Thomas J. Balk, Scott Roberts

Producción científica: Conference contributionrevisión exhaustiva

6 Citas (Scopus)

Resumen

Osmium-ruthenium thin films were deposited on porous tungsten pellets, at the same time as cathode assemblies, to investigate possibilities for minimizing interdiffusion. Previous studies had identified promising film characteristics for inhibiting tungsten interdiffusion. For example, it was found that a 5W-substrate-biased film of 550 nm thickness exhibited high structural and compositional stability, and several other films exhibited promising properties as well. These films were produced and annealed, then analyzed for composition. Emission tests of M-type cathode assemblies, coated with the same candidate films, were performed to assess the degree of lifetime improvement imparted by the films to the cathodes.

Idioma originalEnglish
Título de la publicación alojada2010 IEEE International Vacuum Electronics Conference, IVEC 2010
Páginas73-74
Número de páginas2
DOI
EstadoPublished - 2010
Evento2010 IEEE International Vacuum Electronics Conference, IVEC 2010 - Monterey, CA, United States
Duración: may 18 2010may 20 2010

Serie de la publicación

Nombre2010 IEEE International Vacuum Electronics Conference, IVEC 2010

Conference

Conference2010 IEEE International Vacuum Electronics Conference, IVEC 2010
País/TerritorioUnited States
CiudadMonterey, CA
Período5/18/105/20/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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