TY - GEN
T1 - A new fabrication procedure for reproducibly observing leakage current reduction of SiO2 due to enhanced phonon-energy coupling
AU - Ong, Pang Leen
AU - Chen, Zhi
PY - 2008
Y1 - 2008
N2 - We analyzed the problems in observation of large leakage-current reduction of ultrathin SiO2 due to enhanced phonon-energy coupling. A lithographic method for fabrication of MOS capacitors with post-metal anneal is needed to have reproducible and reliable results. We developed a bilayer resist lithographic method based on all-organic resist and developer to fabricate Ni-gate MOS capacitors. The bilayer resist lift-off procedure uses SU-8 with Shipley S1813 as the intermediate layer. After development, an undercut profile of the bi-layer resist is clearly demonstrated. The Ni-gate MOS capacitors are fabricated successfully, which can withstand post-metal anneal. Experimental I-V and C-V curves, together with the C-V curves simulated using the Berkeley Quantum (QM) simulator, demonstrate that large leakage-current reduction (∼1000 x) can be reliably and reproducibly achieved on ultra thin Si02 (∼24 Å) after proper RTP processing.
AB - We analyzed the problems in observation of large leakage-current reduction of ultrathin SiO2 due to enhanced phonon-energy coupling. A lithographic method for fabrication of MOS capacitors with post-metal anneal is needed to have reproducible and reliable results. We developed a bilayer resist lithographic method based on all-organic resist and developer to fabricate Ni-gate MOS capacitors. The bilayer resist lift-off procedure uses SU-8 with Shipley S1813 as the intermediate layer. After development, an undercut profile of the bi-layer resist is clearly demonstrated. The Ni-gate MOS capacitors are fabricated successfully, which can withstand post-metal anneal. Experimental I-V and C-V curves, together with the C-V curves simulated using the Berkeley Quantum (QM) simulator, demonstrate that large leakage-current reduction (∼1000 x) can be reliably and reproducibly achieved on ultra thin Si02 (∼24 Å) after proper RTP processing.
KW - Bilayer resist
KW - Gate leakage current
KW - RTP
KW - Ultrathin oxide
UR - https://www.scopus.com/pages/publications/51849119269
UR - https://www.scopus.com/inward/citedby.url?scp=51849119269&partnerID=8YFLogxK
U2 - 10.1109/UGIM.2008.21
DO - 10.1109/UGIM.2008.21
M3 - Conference contribution
AN - SCOPUS:51849119269
SN - 9781424424849
T3 - Biennial University/Government/Industry Microelectronics Symposium - Proceedings
SP - 53
EP - 57
BT - 2008 17th Biennial University/Government/Industry Micro-Nano Symposium - Proceedings, UGIM
T2 - 2008 17th Biennial University/Government/Industry Micro-Nano Symposium - UGIM
Y2 - 13 July 2008 through 16 July 2008
ER -