TY - GEN
T1 - A new physics effect, phonon-energy-coupling enhancement, and its applications for leakage current reduction of gate dielectrics
AU - Chen, Zhi
AU - Guo, Jun
AU - Samantaray, Chandan B.
AU - Ong, Pangleen
PY - 2008
Y1 - 2008
N2 - Since discovery of the phonon-energy coupling enhancement (PECE) effect, significant progress has been made in understanding of this new physics effect. Extensive evidence showed that all chemical bonds in SiO2/Si, including Si-D, Si-O, and Si-Si bonds are strengthened due to the PECE effect. To our great surprise, the quantum tunneling current of SiO2 is also reduced by 2-5 orders of magnitude. The key factors for generation of the PECE effect are the structure change at high temperature and repairing of defects by trace O2. There is a strong correlation between the leakage current reduction of high-k HfSiON and concentration of Si-O bonds suggesting that it is the PECE effect that causes the leakage current reduction of high-k oxides.
AB - Since discovery of the phonon-energy coupling enhancement (PECE) effect, significant progress has been made in understanding of this new physics effect. Extensive evidence showed that all chemical bonds in SiO2/Si, including Si-D, Si-O, and Si-Si bonds are strengthened due to the PECE effect. To our great surprise, the quantum tunneling current of SiO2 is also reduced by 2-5 orders of magnitude. The key factors for generation of the PECE effect are the structure change at high temperature and repairing of defects by trace O2. There is a strong correlation between the leakage current reduction of high-k HfSiON and concentration of Si-O bonds suggesting that it is the PECE effect that causes the leakage current reduction of high-k oxides.
UR - https://www.scopus.com/pages/publications/55849092523
UR - https://www.scopus.com/pages/publications/55849092523#tab=citedBy
U2 - 10.1149/1.2908631
DO - 10.1149/1.2908631
M3 - Conference contribution
AN - SCOPUS:55849092523
SN - 9781566776271
T3 - ECS Transactions
SP - 189
EP - 198
BT - ECS Transactions - Dielectrics for Nanosystems 3
T2 - 3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting
Y2 - 18 May 2008 through 22 May 2008
ER -