Analysis of CuPc-based organic solar cell with high photovoltage

Alberto Aguilera; R. Suresh Singh; Balaji Parthasarathy; Karen E. Sampson; Subhash C.C. Vallurupalli; John E. Anthony; Marcia M. Payne; Vijay P. Singh

Analysis of CuPc-based organic solar cell with high photovoltage

Alberto Aguilera, R. Suresh Singh, Balaji Parthasarathy, Karen E. Sampson, Subhash C.C. Vallurupalli, John E. Anthony, Marcia M. Payne, Vijay P. Singh

Chemistry

Producción científica: Conference article › revisión exhaustiva

1 Cita (Scopus)

Resumen

Photovoltaic devices of the configuration ITO-PEDOT:PSS/CuPc/PTCBI/AI were investigated. A high open circuit voltage (V_oc) of 1.125V was obtained when the PTCBI layer was 7 nm thick. Value of V_oc was lower when silver, copper or gold electrode was used instead of aluminum. However, short-circuit current density (J_sc) with these electrodes was much higher (4 mA/cm²) than in the case of aluminum (0.12 mA/cm ²). These results could be understood in terms of a modified CuPc/Al Schottky diode model for the thin PTCBI case and a CuPc/PTCBI heterojunction model for the thick PTCBI case. Also, the formation of a thin, protective aluminum oxide layer under the aluminum electrode was postulated. For devices with silver, copper and gold electrodes, absence of this protective layer was thought to be the cause of the relatively lower V_oc and higher J _sc.

Idioma original	English
Páginas (desde-hasta)	121-124
Número de páginas	4
Publicación	Conference Record of the IEEE Photovoltaic Specialists Conference
Estado	Published - 2005
Evento	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duración: ene 3 2005 → ene 7 2005

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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@article{926910c375094029bcc310079c4ca23e,

title = "Analysis of CuPc-based organic solar cell with high photovoltage",

abstract = "Photovoltaic devices of the configuration ITO-PEDOT:PSS/CuPc/PTCBI/AI were investigated. A high open circuit voltage (Voc) of 1.125V was obtained when the PTCBI layer was 7 nm thick. Value of Voc was lower when silver, copper or gold electrode was used instead of aluminum. However, short-circuit current density (Jsc) with these electrodes was much higher (4 mA/cm2) than in the case of aluminum (0.12 mA/cm 2). These results could be understood in terms of a modified CuPc/Al Schottky diode model for the thin PTCBI case and a CuPc/PTCBI heterojunction model for the thick PTCBI case. Also, the formation of a thin, protective aluminum oxide layer under the aluminum electrode was postulated. For devices with silver, copper and gold electrodes, absence of this protective layer was thought to be the cause of the relatively lower Voc and higher J sc.",

author = "Alberto Aguilera and Singh, \{R. Suresh\} and Balaji Parthasarathy and Sampson, \{Karen E.\} and Vallurupalli, \{Subhash C.C.\} and Anthony, \{John E.\} and Payne, \{Marcia M.\} and Singh, \{Vijay P.\}",

year = "2005",

language = "English",

pages = "121--124",

note = "31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

}

TY - JOUR

T1 - Analysis of CuPc-based organic solar cell with high photovoltage

AU - Aguilera, Alberto

AU - Singh, R. Suresh

AU - Parthasarathy, Balaji

AU - Sampson, Karen E.

AU - Vallurupalli, Subhash C.C.

AU - Anthony, John E.

AU - Payne, Marcia M.

AU - Singh, Vijay P.

PY - 2005

Y1 - 2005

N2 - Photovoltaic devices of the configuration ITO-PEDOT:PSS/CuPc/PTCBI/AI were investigated. A high open circuit voltage (Voc) of 1.125V was obtained when the PTCBI layer was 7 nm thick. Value of Voc was lower when silver, copper or gold electrode was used instead of aluminum. However, short-circuit current density (Jsc) with these electrodes was much higher (4 mA/cm2) than in the case of aluminum (0.12 mA/cm 2). These results could be understood in terms of a modified CuPc/Al Schottky diode model for the thin PTCBI case and a CuPc/PTCBI heterojunction model for the thick PTCBI case. Also, the formation of a thin, protective aluminum oxide layer under the aluminum electrode was postulated. For devices with silver, copper and gold electrodes, absence of this protective layer was thought to be the cause of the relatively lower Voc and higher J sc.

AB - Photovoltaic devices of the configuration ITO-PEDOT:PSS/CuPc/PTCBI/AI were investigated. A high open circuit voltage (Voc) of 1.125V was obtained when the PTCBI layer was 7 nm thick. Value of Voc was lower when silver, copper or gold electrode was used instead of aluminum. However, short-circuit current density (Jsc) with these electrodes was much higher (4 mA/cm2) than in the case of aluminum (0.12 mA/cm 2). These results could be understood in terms of a modified CuPc/Al Schottky diode model for the thin PTCBI case and a CuPc/PTCBI heterojunction model for the thick PTCBI case. Also, the formation of a thin, protective aluminum oxide layer under the aluminum electrode was postulated. For devices with silver, copper and gold electrodes, absence of this protective layer was thought to be the cause of the relatively lower Voc and higher J sc.

UR - https://www.scopus.com/pages/publications/27944446003

UR - https://www.scopus.com/inward/citedby.url?scp=27944446003&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:27944446003

SN - 0160-8371

SP - 121

EP - 124

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

Analysis of CuPc-based organic solar cell with high photovoltage

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ODS de las Naciones Unidas

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