Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages

Young Kwang Kim; Seok Ha Lee; Hyui Seung Lee; Bong Seok Kim; Yong Hee Lee; Jinju Lee; Kangguo Cheng; Zhi Chen; Karl Hess; Joseph W. Lyding

Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages

Young Kwang Kim
, Seok Ha Lee
, Hyui Seung Lee
, Bong Seok Kim
, Yong Hee Lee
, Jinju Lee
, Kangguo Cheng
, Zhi Chen
, Karl Hess
, Joseph W. Lyding

Producción científica: Paper › revisión exhaustiva

1 Cita (Scopus)

Resumen

The latent damage induced by plasma processes has been investigated by applying polarized constant current stress to the gate electrode of n- and p-MOSFETs. By optimizing the stressing condition to effectively monitor the plasma damage, deuterium sintering is found to be very efficient at reducing plasma damage by suppressing the regeneration of interface states.

Idioma original	English
Páginas	65-68
Número de páginas	4
Estado	Published - 1999
Evento	Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) - Monterey, CA, USA Duración: may 9 1999 → may 11 1999

Conference

Conference	Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID)
Ciudad	Monterey, CA, USA
Período	5/9/99 → 5/11/99

ASJC Scopus subject areas

General Engineering

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Kim, Y. K., Lee, S. H., Lee, H. S., Kim, B. S., Lee, Y. H., Lee, J., Cheng, K., Chen, Z., Hess, K., & Lyding, J. W. (1999). Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages. 65-68. Papel presentado en Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID), Monterey, CA, USA.

@conference{443572d7cdef4f6b9fb079409a4dfa2d,

title = "Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages",

abstract = "The latent damage induced by plasma processes has been investigated by applying polarized constant current stress to the gate electrode of n- and p-MOSFETs. By optimizing the stressing condition to effectively monitor the plasma damage, deuterium sintering is found to be very efficient at reducing plasma damage by suppressing the regeneration of interface states.",

author = "Kim, \{Young Kwang\} and Lee, \{Seok Ha\} and Lee, \{Hyui Seung\} and Kim, \{Bong Seok\} and Lee, \{Yong Hee\} and Jinju Lee and Kangguo Cheng and Zhi Chen and Karl Hess and Lyding, \{Joseph W.\}",

year = "1999",

language = "English",

pages = "65--68",

note = "Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) ; Conference date: 09-05-1999 Through 11-05-1999",

}

Kim, YK, Lee, SH, Lee, HS, Kim, BS, Lee, YH, Lee, J, Cheng, K, Chen, Z, Hess, K & Lyding, JW 1999, 'Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages', Papel presentado en Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID), Monterey, CA, USA, 5/9/99 - 5/11/99 pp. 65-68.

Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages. / Kim, Young Kwang; Lee, Seok Ha; Lee, Hyui Seung et al.
1999. 65-68 Papel presentado en Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID), Monterey, CA, USA.

Producción científica: Paper › revisión exhaustiva

TY - CONF

T1 - Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages

AU - Kim, Young Kwang

AU - Lee, Seok Ha

AU - Lee, Hyui Seung

AU - Kim, Bong Seok

AU - Lee, Yong Hee

AU - Lee, Jinju

AU - Cheng, Kangguo

AU - Chen, Zhi

AU - Hess, Karl

AU - Lyding, Joseph W.

PY - 1999

Y1 - 1999

N2 - The latent damage induced by plasma processes has been investigated by applying polarized constant current stress to the gate electrode of n- and p-MOSFETs. By optimizing the stressing condition to effectively monitor the plasma damage, deuterium sintering is found to be very efficient at reducing plasma damage by suppressing the regeneration of interface states.

AB - The latent damage induced by plasma processes has been investigated by applying polarized constant current stress to the gate electrode of n- and p-MOSFETs. By optimizing the stressing condition to effectively monitor the plasma damage, deuterium sintering is found to be very efficient at reducing plasma damage by suppressing the regeneration of interface states.

UR - https://www.scopus.com/pages/publications/0033338219

UR - https://www.scopus.com/pages/publications/0033338219#tab=citedBy

M3 - Paper

AN - SCOPUS:0033338219

SP - 65

EP - 68

T2 - Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID)

Y2 - 9 May 1999 through 11 May 1999

ER -

Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages

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ASJC Scopus subject areas

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