Broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation

Ting Zhang; Waseem Ahmad; Bohan Liu; Yaoyu Xuan; Xiangxiao Ying; Zhijun Liu; Yuankai Li; Zhi Chen; Shibin Li

doi:10.1016/j.matlet.2017.03.011

Broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation

Ting Zhang
, Waseem Ahmad
, Bohan Liu
, Yaoyu Xuan
, Xiangxiao Ying
, Zhijun Liu
, Yuankai Li
, Zhi Chen
, Shibin Li

Producción científica: Article › revisión exhaustiva

16 Citas (Scopus)

Resumen

Broadband infrared response has attracted great attention due to its potential applications in silicon based photodetectors. We have studied broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation. The fabricated PN photodiodes exhibit several photoresponse spectral peaks in near and mid-infrared region of electromagnetic spectrum. The onset energies corresponding to the distinct sub-band gap photoresponse features are consistent with the active energy levels of known sulfur within the silicon band-gap. This technique may offer a promising approach to fabricate low-cost broadband silicon based detectors.

Idioma original	English
Páginas (desde-hasta)	16-19
Número de páginas	4
Publicación	Materials Letters
Volumen	196
DOI	https://doi.org/10.1016/j.matlet.2017.03.011
Estado	Published - jun 1 2017

Nota bibliográfica

Publisher Copyright:
© 2017

Financiación

The research described in this letter was supported by National Natural Science Foundation of China under Grant Nos. 61421002, 61574029 and 61371046. This work was also partially supported by University of Kentucky.

Financiadores	Número del financiador
University of Kentucky
National Natural Science Foundation of China (NSFC)	61574029, 61371046, 61421002

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation",

abstract = "Broadband infrared response has attracted great attention due to its potential applications in silicon based photodetectors. We have studied broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation. The fabricated PN photodiodes exhibit several photoresponse spectral peaks in near and mid-infrared region of electromagnetic spectrum. The onset energies corresponding to the distinct sub-band gap photoresponse features are consistent with the active energy levels of known sulfur within the silicon band-gap. This technique may offer a promising approach to fabricate low-cost broadband silicon based detectors.",

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author = "Ting Zhang and Waseem Ahmad and Bohan Liu and Yaoyu Xuan and Xiangxiao Ying and Zhijun Liu and Yuankai Li and Zhi Chen and Shibin Li",

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doi = "10.1016/j.matlet.2017.03.011",

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T1 - Broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation

AU - Zhang, Ting

AU - Ahmad, Waseem

AU - Liu, Bohan

AU - Xuan, Yaoyu

AU - Ying, Xiangxiao

AU - Liu, Zhijun

AU - Li, Yuankai

AU - Chen, Zhi

AU - Li, Shibin

PY - 2017/6/1

Y1 - 2017/6/1

N2 - Broadband infrared response has attracted great attention due to its potential applications in silicon based photodetectors. We have studied broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation. The fabricated PN photodiodes exhibit several photoresponse spectral peaks in near and mid-infrared region of electromagnetic spectrum. The onset energies corresponding to the distinct sub-band gap photoresponse features are consistent with the active energy levels of known sulfur within the silicon band-gap. This technique may offer a promising approach to fabricate low-cost broadband silicon based detectors.

AB - Broadband infrared response has attracted great attention due to its potential applications in silicon based photodetectors. We have studied broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation. The fabricated PN photodiodes exhibit several photoresponse spectral peaks in near and mid-infrared region of electromagnetic spectrum. The onset energies corresponding to the distinct sub-band gap photoresponse features are consistent with the active energy levels of known sulfur within the silicon band-gap. This technique may offer a promising approach to fabricate low-cost broadband silicon based detectors.

KW - Broadband infrared response

KW - Femtosecond laser irradiation

KW - Hyperdoped silicon

UR - https://www.scopus.com/pages/publications/85014938907

UR - https://www.scopus.com/pages/publications/85014938907#tab=citedBy

U2 - 10.1016/j.matlet.2017.03.011

DO - 10.1016/j.matlet.2017.03.011

M3 - Article

AN - SCOPUS:85014938907

SN - 0167-577X

VL - 196

SP - 16

EP - 19

JO - Materials Letters

JF - Materials Letters

ER -

Broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation

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ASJC Scopus subject areas

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