Charge transport in solution processable polycrystalline dual-gate organic field effect transistors

A. K. Tripathi; E. C.P. Smits; M. Loth; J. E. Anthony; G. H. Gelinck

doi:10.1063/1.3591969

Charge transport in solution processable polycrystalline dual-gate organic field effect transistors

A. K. Tripathi
, E. C.P. Smits
, M. Loth
, J. E. Anthony
, G. H. Gelinck

Producción científica: Article › revisión exhaustiva

17 Citas (Scopus)

Resumen

Dual gate organic thin film transistors based on solution processable fluorinated 5,11 bis(triethylsilylethynyl) anthradithiophene semiconductor were fabricated. Top (Teflon, ε_r =2.1) and bottom (SiO₂, ε_r =3.9) gate dielectrics with different dielectric constants were chosen. Top gate mobilities >1 cm² /Vs and bottom gate mobilities >0.1 cm²/V s were achieved. Temperature dependent mobility measurements show thermally activated charge transport and a comparative analysis is performed in the framework of two models representing polaron hopping as well as hopping in Gaussian density of states (DOS), respectively.

Idioma original	English
Número de artículo	202106
Publicación	Applied Physics Letters
Volumen	98
N.º	20
DOI	https://doi.org/10.1063/1.3591969
Estado	Published - may 16 2011

Nota bibliográfica

Funding Information:
The research leading to these results has received funding from the European Community’s Seventh Framework Program (FP7/2007-2013) under grant Agreement No. 216546 of the FLAME project. We would like to thank Professor Paul W. M. Blom and Professor Dago de Leeuw for fruitful discussions.

Financiación

The research leading to these results has received funding from the European Community’s Seventh Framework Program (FP7/2007-2013) under grant Agreement No. 216546 of the FLAME project. We would like to thank Professor Paul W. M. Blom and Professor Dago de Leeuw for fruitful discussions.

Financiadores	Número del financiador
Seventh Framework Programme	216546

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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AU - Smits, E. C.P.

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AU - Gelinck, G. H.

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Charge transport in solution processable polycrystalline dual-gate organic field effect transistors

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