Chemisorption on semiconductors: The role of quantum corrections on the space charge regions in multiple dimensions

Francesco Ciucci; Carlo De Falco; Marcelo I. Guzman; Sara Lee; Tomonori Honda

doi:10.1063/1.4709483

Chemisorption on semiconductors: The role of quantum corrections on the space charge regions in multiple dimensions

Francesco Ciucci
, Carlo De Falco
, Marcelo I. Guzman
, Sara Lee
, Tomonori Honda

Producción científica: Article › revisión exhaustiva

10 Citas (Scopus)

Resumen

The chemisorption of O ₂ on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrödinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case.

Idioma original	English
Número de artículo	183106
Publicación	Applied Physics Letters
Volumen	100
N.º	18
DOI	https://doi.org/10.1063/1.4709483
Estado	Published - abr 30 2012

Nota bibliográfica

Funding Information:
F.C. thanks HKUST for providing start-up funds. S.L. and F.C. thank the Marie Curie Reintegration Grant FastCell-256583. M.I.G. thanks funding from the University of Kentucky.

Financiación

F.C. thanks HKUST for providing start-up funds. S.L. and F.C. thank the Marie Curie Reintegration Grant FastCell-256583. M.I.G. thanks funding from the University of Kentucky.

Financiadores
University of Kentucky

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4709483

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abstract = "The chemisorption of O 2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schr{\"o}dinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case.",

author = "Francesco Ciucci and \{De Falco\}, Carlo and Guzman, \{Marcelo I.\} and Sara Lee and Tomonori Honda",

note = "Funding Information: F.C. thanks HKUST for providing start-up funds. S.L. and F.C. thank the Marie Curie Reintegration Grant FastCell-256583. M.I.G. thanks funding from the University of Kentucky.",

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AU - Ciucci, Francesco

AU - De Falco, Carlo

AU - Guzman, Marcelo I.

AU - Lee, Sara

AU - Honda, Tomonori

N1 - Funding Information: F.C. thanks HKUST for providing start-up funds. S.L. and F.C. thank the Marie Curie Reintegration Grant FastCell-256583. M.I.G. thanks funding from the University of Kentucky.

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Y1 - 2012/4/30

N2 - The chemisorption of O 2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrödinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case.

AB - The chemisorption of O 2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrödinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case.

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VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 183106

ER -

Chemisorption on semiconductors: The role of quantum corrections on the space charge regions in multiple dimensions

Resumen

Nota bibliográfica

Financiación

ASJC Scopus subject areas

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