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Crystallographic etching of few-layer graphene

Producción científica: Articlerevisión exhaustiva

528 Citas (Scopus)

Resumen

We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (>1 μm) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise construction of integrated circuits from single graphene sheets with a wide range of technological applications.

Idioma originalEnglish
Páginas (desde-hasta)1912-1915
Número de páginas4
PublicaciónNano Letters
Volumen8
N.º7
DOI
EstadoPublished - jul 2008

Financiación

FinanciadoresNúmero del financiador
U.S. Department of Energy Chinese Academy of Sciences Guangzhou Municipal Science and Technology Project Oak Ridge National Laboratory Extreme Science and Engineering Discovery Environment National Science Foundation National Energy Research Scientific Computing Center National Natural Science Foundation of China0425780

    ASJC Scopus subject areas

    • Bioengineering
    • General Chemistry
    • General Materials Science
    • Condensed Matter Physics
    • Mechanical Engineering

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