Resumen
We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (>1 μm) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise construction of integrated circuits from single graphene sheets with a wide range of technological applications.
| Idioma original | English |
|---|---|
| Páginas (desde-hasta) | 1912-1915 |
| Número de páginas | 4 |
| Publicación | Nano Letters |
| Volumen | 8 |
| N.º | 7 |
| DOI | |
| Estado | Published - jul 2008 |
Financiación
| Financiadores | Número del financiador |
|---|---|
| U.S. Department of Energy Chinese Academy of Sciences Guangzhou Municipal Science and Technology Project Oak Ridge National Laboratory Extreme Science and Engineering Discovery Environment National Science Foundation National Energy Research Scientific Computing Center National Natural Science Foundation of China | 0425780 |
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- General Materials Science
- Condensed Matter Physics
- Mechanical Engineering
Huella
Profundice en los temas de investigación de 'Crystallographic etching of few-layer graphene'. En conjunto forman una huella única.Citar esto
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver