Doping-type dependence of damage in silicon diodes exposed to X-ray, proton, and He+ irradiations

M. Caussanel; A. Canals; S. K. Dixit; M. J. Beck; A. D. Touboul; R. D. Schrimpf; D. M. Fleetwood; S. T. Pantelides

doi:10.1109/TNS.2007.909021

Doping-type dependence of damage in silicon diodes exposed to X-ray, proton, and He⁺ irradiations

M. Caussanel
, A. Canals
, S. K. Dixit
, M. J. Beck
, A. D. Touboul
, R. D. Schrimpf
, D. M. Fleetwood
, S. T. Pantelides

Producción científica: Article › revisión exhaustiva

20 Citas (Scopus)

Resumen

Different amounts of degradation for n-Si and p-Si are observed after X-ray, H⁺, and He⁺ irradiations. Recombination lifetime and forward I-V measurements made on abrupt-junction diodes are compared to theory. Ionizing damage and displacement damage associated with surface and bulk trapping mechanisms, respectively, compete with each other and lead to different behaviors according to the doping type of the silicon on the lightly doped side of the junction. Surface effects are dominant in the n⁺/p diodes compared to the p+/n diodes; bulk trapping prevails in the n-Si compared to p-Si. Independently of ion type or fluence, the life-time damage factor due to irradiation is worse in the p-Si than in the n-Si by a factor of 2-3 times.

Idioma original	English
Páginas (desde-hasta)	1925-1930
Número de páginas	6
Publicación	IEEE Transactions on Nuclear Science
Volumen	54
N.º	6
DOI	https://doi.org/10.1109/TNS.2007.909021
Estado	Published - dic 2007

Nota bibliográfica

Funding Information:
Manuscript received July 20, 2007; revised September 3, 2007. This work was supported in part by the AFOSR MURI Program. M. Caussanel is with the Université de Perpignan Via Domitia, Perpignan, 66860, France (e-mail: [email protected]). A. Canals is with TRAD, Labege 31674, France (e-mail: anna.canals@trad. fr). S. K. Dixit is with the Interdisciplinary Materials Science Program, Vanderbilt University, Nashville, TN 37235 USA (e-mail: sriram.k.dixit@ vanderbilt.edu). M. J. Beck and S. T. Pantelides are with the Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 USA (e-mail: [email protected]; [email protected]). A. D. Touboul is with IES, Université Montpellier II, F-34095 Montpellier cedex 5, France (e-mail: [email protected]). R. D. Schrimpf and D. M. Fleetwood are with the Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235 USA (e-mail: [email protected]; [email protected]). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2007.909021

Financiación

Manuscript received July 20, 2007; revised September 3, 2007. This work was supported in part by the AFOSR MURI Program. M. Caussanel is with the Université de Perpignan Via Domitia, Perpignan, 66860, France (e-mail: [email protected]). A. Canals is with TRAD, Labege 31674, France (e-mail: anna.canals@trad. fr). S. K. Dixit is with the Interdisciplinary Materials Science Program, Vanderbilt University, Nashville, TN 37235 USA (e-mail: sriram.k.dixit@ vanderbilt.edu). M. J. Beck and S. T. Pantelides are with the Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 USA (e-mail: [email protected]; [email protected]). A. D. Touboul is with IES, Université Montpellier II, F-34095 Montpellier cedex 5, France (e-mail: [email protected]). R. D. Schrimpf and D. M. Fleetwood are with the Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235 USA (e-mail: [email protected]; [email protected]). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2007.909021

Financiadores
Air Force Office of Scientific Research, United States Air Force

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Acceder al documento

10.1109/TNS.2007.909021

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title = "Doping-type dependence of damage in silicon diodes exposed to X-ray, proton, and He+ irradiations",

abstract = "Different amounts of degradation for n-Si and p-Si are observed after X-ray, H+, and He+ irradiations. Recombination lifetime and forward I-V measurements made on abrupt-junction diodes are compared to theory. Ionizing damage and displacement damage associated with surface and bulk trapping mechanisms, respectively, compete with each other and lead to different behaviors according to the doping type of the silicon on the lightly doped side of the junction. Surface effects are dominant in the n+/p diodes compared to the p+/n diodes; bulk trapping prevails in the n-Si compared to p-Si. Independently of ion type or fluence, the life-time damage factor due to irradiation is worse in the p-Si than in the n-Si by a factor of 2-3 times.",

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note = "Funding Information: Manuscript received July 20, 2007; revised September 3, 2007. This work was supported in part by the AFOSR MURI Program. M. Caussanel is with the Universit{\'e} de Perpignan Via Domitia, Perpignan, 66860, France (e-mail: [email protected]). A. Canals is with TRAD, Labege 31674, France (e-mail: anna.canals@trad. fr). S. K. Dixit is with the Interdisciplinary Materials Science Program, Vanderbilt University, Nashville, TN 37235 USA (e-mail: sriram.k.dixit@ vanderbilt.edu). M. J. Beck and S. T. Pantelides are with the Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 USA (e-mail: [email protected]; [email protected]). A. D. Touboul is with IES, Universit{\'e} Montpellier II, F-34095 Montpellier cedex 5, France (e-mail: [email protected]). R. D. Schrimpf and D. M. Fleetwood are with the Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235 USA (e-mail: [email protected]; [email protected]). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2007.909021",

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AU - Caussanel, M.

AU - Canals, A.

AU - Dixit, S. K.

AU - Beck, M. J.

AU - Touboul, A. D.

AU - Schrimpf, R. D.

AU - Fleetwood, D. M.

AU - Pantelides, S. T.

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N2 - Different amounts of degradation for n-Si and p-Si are observed after X-ray, H+, and He+ irradiations. Recombination lifetime and forward I-V measurements made on abrupt-junction diodes are compared to theory. Ionizing damage and displacement damage associated with surface and bulk trapping mechanisms, respectively, compete with each other and lead to different behaviors according to the doping type of the silicon on the lightly doped side of the junction. Surface effects are dominant in the n+/p diodes compared to the p+/n diodes; bulk trapping prevails in the n-Si compared to p-Si. Independently of ion type or fluence, the life-time damage factor due to irradiation is worse in the p-Si than in the n-Si by a factor of 2-3 times.

AB - Different amounts of degradation for n-Si and p-Si are observed after X-ray, H+, and He+ irradiations. Recombination lifetime and forward I-V measurements made on abrupt-junction diodes are compared to theory. Ionizing damage and displacement damage associated with surface and bulk trapping mechanisms, respectively, compete with each other and lead to different behaviors according to the doping type of the silicon on the lightly doped side of the junction. Surface effects are dominant in the n+/p diodes compared to the p+/n diodes; bulk trapping prevails in the n-Si compared to p-Si. Independently of ion type or fluence, the life-time damage factor due to irradiation is worse in the p-Si than in the n-Si by a factor of 2-3 times.

KW - Doping

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KW - Ionization

KW - Semiconductor junctions

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