Dynamics of charge flow in the channel of a thin-film field-effect transistor

E. G. Bittle; J. W. Brill; J. P. Straley

doi:10.1063/1.4764896

Dynamics of charge flow in the channel of a thin-film field-effect transistor

E. G. Bittle
, J. W. Brill
, J. P. Straley

Producción científica: Article › revisión exhaustiva

1 Cita (Scopus)

Resumen

The local conductivity in the channel of a thin-film field-effect transistor is proportional to the charge density induced by the local gate voltage. We show how this determines the frequency- and position-dependence of the charge induced in the channel for the case of zero applied current: zero drain-source voltage with charge induced by a square-wave voltage applied to the gate, assuming constant mobility and negligible contact impedances. An approximate expression for the frequency dependence of the induced charge in the center of the channel can be conveniently used to determine the charge mobility. Fits of electro-optic measurements of the induced charge in organic transistors are used as examples.

Idioma original	English
Número de artículo	094507
Publicación	Journal of Applied Physics
Volumen	112
N.º	9
DOI	https://doi.org/10.1063/1.4764896
Estado	Published - nov 1 2012

Nota bibliográfica

Funding Information:
We thank John Anthony for providing TIPS-Pn and helpful discussions. This work was supported in part by the U.S. National Science Foundation through Grant Nos. DMR-0800367 and EPS-0814194 and the Center for Advanced Materials.

Financiación

We thank John Anthony for providing TIPS-Pn and helpful discussions. This work was supported in part by the U.S. National Science Foundation through Grant Nos. DMR-0800367 and EPS-0814194 and the Center for Advanced Materials.

Financiadores	Número del financiador
Center for Advanced Meta-Materials
U.S. Department of Energy Chinese Academy of Sciences Guangzhou Municipal Science and Technology Project Oak Ridge National Laboratory Extreme Science and Engineering Discovery Environment National Science Foundation National Energy Research Scientific Computing Center National Natural Science Foundation of China	DMR-0800367, EPS-0814194

ASJC Scopus subject areas

General Physics and Astronomy

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Dynamics of charge flow in the channel of a thin-film field-effect transistor

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