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Electro-optic measurement of carrier mobility in an organic thin-film transistor

Producción científica: Articlerevisión exhaustiva

11 Citas (Scopus)

Resumen

We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect transistor. By applying square-wave voltages of variable frequency to the gate or drain, one can measure the time it takes for charges to accumulate on the surface, and therefore, determine their mobility.

Idioma originalEnglish
Número de artículo013302
PublicaciónApplied Physics Letters
Volumen97
N.º1
DOI
EstadoPublished - jul 5 2010

Nota bibliográfica

Funding Information:
We thank K.-W. Ng and J. P. Straley for helpful discussions. This work was supported by the National Science Foundation, Grant Nos. DMR-0800367, CHE-0749473, and EPS-0814194.

Financiación

We thank K.-W. Ng and J. P. Straley for helpful discussions. This work was supported by the National Science Foundation, Grant Nos. DMR-0800367, CHE-0749473, and EPS-0814194.

FinanciadoresNúmero del financiador
National Science Foundation (NSF)0801764

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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