Resumen
We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect transistor. By applying square-wave voltages of variable frequency to the gate or drain, one can measure the time it takes for charges to accumulate on the surface, and therefore, determine their mobility.
| Idioma original | English |
|---|---|
| Número de artículo | 013302 |
| Publicación | Applied Physics Letters |
| Volumen | 97 |
| N.º | 1 |
| DOI | |
| Estado | Published - jul 5 2010 |
Nota bibliográfica
Funding Information:We thank K.-W. Ng and J. P. Straley for helpful discussions. This work was supported by the National Science Foundation, Grant Nos. DMR-0800367, CHE-0749473, and EPS-0814194.
Financiación
We thank K.-W. Ng and J. P. Straley for helpful discussions. This work was supported by the National Science Foundation, Grant Nos. DMR-0800367, CHE-0749473, and EPS-0814194.
| Financiadores | Número del financiador |
|---|---|
| National Science Foundation (NSF) | 0801764 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Huella
Profundice en los temas de investigación de 'Electro-optic measurement of carrier mobility in an organic thin-film transistor'. En conjunto forman una huella única.Citar esto
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