Evidence for energy coupling from the Si-D vibration mode to the Si-Si and Si-O vibration modes at the SiO2/Si interface

Zhi Chen; Jun Guo; Pangleen Ong

doi:10.1063/1.1611623

Evidence for energy coupling from the Si-D vibration mode to the Si-Si and Si-O vibration modes at the SiO₂/Si interface

Zhi Chen
, Jun Guo
, Pangleen Ong

Electrical and Computer Engineering

Producción científica: Article › revisión exhaustiva

20 Citas (Scopus)

Resumen

The measurement of vibrational modes at the SiO₂/Si interface by Fourier-transform infrared spectrometry (FT-IR) was presented. The theory was found correct for the experiments of breaking Si-H/D bonds using scanning tunneling microscope where oxide was not involved. A difference of 27cm ^-1 was found between the single crystal Si sample and the amorphous Si sample.

Idioma original	English
Páginas (desde-hasta)	2151-2153
Número de páginas	3
Publicación	Applied Physics Letters
Volumen	83
N.º	11
DOI	https://doi.org/10.1063/1.1611623
Estado	Published - sept 15 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1611623

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abstract = "The measurement of vibrational modes at the SiO2/Si interface by Fourier-transform infrared spectrometry (FT-IR) was presented. The theory was found correct for the experiments of breaking Si-H/D bonds using scanning tunneling microscope where oxide was not involved. A difference of 27cm -1 was found between the single crystal Si sample and the amorphous Si sample.",

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AB - The measurement of vibrational modes at the SiO2/Si interface by Fourier-transform infrared spectrometry (FT-IR) was presented. The theory was found correct for the experiments of breaking Si-H/D bonds using scanning tunneling microscope where oxide was not involved. A difference of 27cm -1 was found between the single crystal Si sample and the amorphous Si sample.

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